Datasheet.Directory

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"EXTREME SUPERMINI, 2-2P1D, ESV, 5 PIN","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.1000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"50","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"200 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Ter...

{"Continuous Collector Current":"100 mA","Emitter- Base Voltage VEBO":"10 V","Product Category":"Bipolar Transistors - Pre-Biased","Transistor Polarity":"PNP","Factory Pack Quantity":"4000","DC Collector/Base Gain hfe Min":"50","Pd - Power Dissipation":"100 mW","Mounting Style":"SMD/SMT","Collector- Emitter Voltage VCEO Max":"50 V","Packaging":"Reel","Peak DC Collector Current":"100 mA","Maximum Operating Frequency":"200 MHz (Typ)","Minimum Operating Temperature":"- 55 C","Package / Case":"SMV-5","Typical R...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Product Photos":"SOT-553","Package / Case":"SOT-553","DC Current Gain (hFE) (Min) @ Ic, Vce":"50 @ 10mA, 5V","Frequency - Transition":"200MHz","Voltage - Collector Emitter Breakdown (Max)":"50V","Datasheets":"RN2701JE-06JE -","Resistor - Emitter Base (R2) (Ohms)":"10k","Standard Package":"4,000","Transistor Type":"2 PNP - Pre-Biased (Dual)","Family":"Transistors (BJT) - Arrays, Pre-Biased","Vce Saturation (Max) @ Ib, Ic"...