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RN2701JE.pdf8 Pages, 562 KB, Original

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Toshiba.co.jp/RN2701JE
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"EXTREME SUPERMINI, 2-2P1D, ESV, 5 PIN","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.1000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"200 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Ter...
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Toshiba.semicon-storage.com/RN2701JE(TE85L,F)
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Product Photos":"SOT-553","Package / Case":"SOT-553","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 10mA, 5V","Frequency - Transition":"200MHz","Voltage - Collector Emitter Breakdown (Max)":"50V","Datasheets":"RN2701JE-06JE -","Resistor - Emitter Base (R2) (Ohms)":"4.7k","Standard Package":"1","Transistor Type":"2 PNP - Pre-Biased (Dual) (Emitter Coupled)","Family":"Transistors (BJT) - Arrays, Pre-Biased","Vce Saturation ...
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