Product Details Search Results:
N_a/RN2610
{"Category":"PNP Transistor, Transistor","Amps":"0.8A","MHz":"<1 MHz","Volts":"50V"}...
527 Bytes - 06:42:26, 18 November 2024
Toshiba.co.jp/RN2610
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-3N1A, 6 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"120","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"200 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Terminal Position":"D...
1466 Bytes - 06:42:26, 18 November 2024
Toshiba.semicon-storage.com/RN2610(TE85L,F)
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Product Photos":"SC-74, SOT-457","Package / Case":"SC-74, SOT-457","DC Current Gain (hFE) (Min) @ Ic, Vce":"120 @ 1mA, 5V","Frequency - Transition":"200MHz","Voltage - Collector Emitter Breakdown (Max)":"50V","Datasheets":"RN2610-11 -","Resistor - Emitter Base (R2) (Ohms)":"-","Standard Package":"1","Transistor Type":"2 PNP - Pre-Biased (Dual)","Family":"Transistors (BJT) - Arrays, Pre-Biased","Vce Saturation (Max) @ Ib,...
1978 Bytes - 06:42:26, 18 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| RN2610.pdf | 0.30 | 1 | Request |
