Product Details Search Results:
N_a/RN2607
{"Category":"PNP Transistor, Transistor","Amps":"0.8A","MHz":"<1 MHz","Volts":"50V"}...
526 Bytes - 23:33:26, 15 December 2024
Toshiba.co.jp/RN2607
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-3N1A, 6 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"80","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"200 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Terminal Position":"DU...
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Toshiba.semicon-storage.com/RN2607(TE85L,F)
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Product Photos":"SC-74, SOT-457","Package / Case":"SC-74, SOT-457","DC Current Gain (hFE) (Min) @ Ic, Vce":"80 @ 10mA, 5V","Frequency - Transition":"200MHz","Voltage - Collector Emitter Breakdown (Max)":"50V","Datasheets":"RN2607-09 -","Resistor - Emitter Base (R2) (Ohms)":"47k","Standard Package":"3,000","Transistor Type":"2 PNP Pre-Biased (Dual)","Family":"Transistors (BJT) - Arrays, Pre-Biased","Vce Saturation (Max) @...
1977 Bytes - 23:33:26, 15 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| RN2607.pdf | 0.27 | 1 | Request |
