Datasheet.Directory

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-2N1G, EXTREME SUPERMINI, ES6, 6 PIN","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.1000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"120","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"250 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Te...

{"Packaging":"Reel","Product Category":"Bipolar Transistors - Pre-Biased","Transistor Polarity":"NPN","DC Collector/Base Gain hfe Min":"120","Pd - Power Dissipation":"100 mW","Mounting Style":"SMD/SMT","Collector- Emitter Voltage VCEO Max":"50 V","Emitter- Base Voltage VEBO":"5 V","Package / Case":"SOT-563","Manufacturer":"Toshiba","Brand":"Toshiba","RoHS":"Details","Continuous Collector Current":"100 mA"}...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Product Photos":"SOT-563","Package / Case":"SOT-563, SOT-666","DC Current Gain (hFE) (Min) @ Ic, Vce":"120 @ 1mA, 5V","Frequency - Transition":"250MHz","Voltage - Collector Emitter Breakdown (Max)":"50V","Datasheets":"RN1910,11FE -","Resistor - Emitter Base (R2) (Ohms)":"-","Standard Package":"4,000","Transistor Type":"2 NPN - Pre-Biased (Dual)","Family":"Transistors (BJT) - Arrays, Pre-Biased","Vce Saturation (Max) @ Ib...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Product Photos":"SOT-563","Package / Case":"SOT-563, SOT-666","DC Current Gain (hFE) (Min) @ Ic, Vce":"120 @ 1mA, 5V","Frequency - Transition":"250MHz","Voltage - Collector Emitter Breakdown (Max)":"50V","Datasheets":"RN1910,11FE -","Resistor - Emitter Base (R2) (Ohms)":"-","Standard Package":"4,000","Transistor Type":"2 NPN - Pre-Biased (Dual)","Family":"Transistors (BJT) - Arrays, Pre-Biased","Vce Saturation (Max) @ Ib...