Product Datasheet Search Results:

PRN110241000J.pdf4 Pages, 124 KB, Original
PRN110241000J
California Micro Devices
Isolated resistor termination network
PRN110241000J/T.pdf4 Pages, 124 KB, Original
PRN110241000J/T
California Micro Devices
ISOLATED RESISTOR TERMINATION NETWORK
PRN110241001J.pdf4 Pages, 124 KB, Original
PRN110241001J
California Micro Devices
Isolated resistor termination network
PRN110241001J/R.pdf4 Pages, 124 KB, Original
PRN110241001J/R
California Micro Devices
ISOLATED RESISTOR TERMINATION NETWORK
PRN110241001J/T.pdf4 Pages, 124 KB, Original
PRN110241001J/T
California Micro Devices
ISOLATED RESISTOR TERMINATION NETWORK
PRN110241002J.pdf4 Pages, 124 KB, Original
PRN110241002J
California Micro Devices
Isolated resistor termination network
PRN110241002J/T.pdf4 Pages, 124 KB, Original
PRN110241002J/T
California Micro Devices
ISOLATED RESISTOR TERMINATION NETWORK
PRN1102410R0J.pdf4 Pages, 124 KB, Original
PRN1102410R0J
California Micro Devices
Isolated resistor termination network
PRN1102410R0J/R.pdf4 Pages, 124 KB, Original
PRN1102410R0J/R
California Micro Devices
ISOLATED RESISTOR TERMINATION NETWORK
PRN1102410R0J/T.pdf4 Pages, 124 KB, Original
PRN1102410R0J/T
California Micro Devices
ISOLATED RESISTOR TERMINATION NETWORK
PRN110242001J.pdf4 Pages, 124 KB, Original
PRN110242001J
California Micro Devices
Isolated resistor termination network
PRN1102422R0J.pdf4 Pages, 124 KB, Original
PRN1102422R0J
California Micro Devices
Isolated resistor termination network

Product Details Search Results:

N_a/RN1102
{"Category":"NPN Transistor, Transistor","Amps":"0.1A","MHz":"<1 MHz","Volts":"50V"}...
527 Bytes - 13:30:30, 22 October 2024
Toshiba.co.jp/RN1102
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-2H1A, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"50","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"250 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DU...
1440 Bytes - 13:30:30, 22 October 2024
Toshiba.co.jp/RN1102ACT
{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Mfr Package Description":"CST3, 2-1J1A, 3 PIN","Terminal Form":"NO LEAD","Package Style":"CHIP CARRIER","DC Current Gain-Min (hFE)":"50","Collector Current-Max (IC)":"0.0800 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configuration":"SI...
1373 Bytes - 13:30:30, 22 October 2024
Toshiba.co.jp/RN1102CT
{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Mfr Package Description":"CST3, 2-1J1A, 3 PIN","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.0500 W","Package Style":"CHIP CARRIER","DC Current Gain-Min (hFE)":"60","Collector Current-Max (IC)":"0.0500 A","Collector-emitter Voltage-Max":"20 V","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Packa...
1410 Bytes - 13:30:30, 22 October 2024
Toshiba.co.jp/RN1102FV
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-1L1A, VESM, 3 PIN","Terminal Form":"FLAT","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"250 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configur...
1380 Bytes - 13:30:30, 22 October 2024
Toshiba.co.jp/RN1102,LF(CT
{"Packaging":"Reel","Product Category":"Bipolar Transistors - Pre-Biased","Transistor Polarity":"NPN","Brand":"Toshiba","Pd - Power Dissipation":"100 mW","Mounting Style":"SMD/SMT","Collector- Emitter Voltage VCEO Max":"50 V","Emitter- Base Voltage VEBO":"10 V","Package / Case":"SOT-416","Typical Resistor Ratio":"1","Manufacturer":"Toshiba","DC Collector/Base Gain hfe Min":"30","RoHS":"Details","Continuous Collector Current":"100 mA"}...
1566 Bytes - 13:30:30, 22 October 2024
Toshiba.co.jp/RN1102MFV
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ULTRA SMALL, VESM, 2-1L1A, 3 PIN","Terminal Form":"FLAT","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"50","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configu...
1386 Bytes - 13:30:30, 22 October 2024
Toshiba.co.jp/RN1102MFV,L3F
{"Packaging":"Reel","Product Category":"Bipolar Transistors - Pre-Biased","Transistor Polarity":"NPN","Brand":"Toshiba","Pd - Power Dissipation":"150 mW","Mounting Style":"SMD/SMT","Collector- Emitter Voltage VCEO Max":"50 V","Emitter- Base Voltage VEBO":"10 V","Package / Case":"SOT-723","Typical Resistor Ratio":"1","Manufacturer":"Toshiba","DC Collector/Base Gain hfe Min":"30","RoHS":"Details","Continuous Collector Current":"100 mA"}...
1510 Bytes - 13:30:30, 22 October 2024
Toshiba.co.jp/RN1102MFV,L3F(B
{"Collector Current (DC) ":"0.1(A)","Emitter-Collector Voltage (Max)":"50(V)","Packaging":"Tape and Reel","Power Dissipation":"0.15(W)","Package Type":"VESM","DC Current Gain":"50","Typical Resistor Ratio":"1","Configuration":"Single","Type":"NPN","Typical Input Resistor":"10"}...
1359 Bytes - 13:30:30, 22 October 2024
Toshiba.co.jp/RN1102MFV,L3F(CT
856 Bytes - 13:30:30, 22 October 2024
Toshiba.co.jp/RN1102MFV(TL3,T)
{"Transistor Polarity":"NPN","Collector-Emitter Voltage":"50 V","Mounting":"Surface Mount","Rad Hardened":"No","Package Type":"VESM","DC Current Gain":"50","Pin Count":"3"}...
1253 Bytes - 13:30:30, 22 October 2024
Toshiba.co.jp/RN1102MFV(TPL3)
{"Continuous Collector Current":"100 mA","Factory Pack Quantity":"8000","Product Category":"Bipolar Transistors - Pre-Biased","Transistor Polarity":"NPN","DC Collector/Base Gain hfe Min":"50","Mounting Style":"SMD/SMT","Collector- Emitter Voltage VCEO Max":"50 V","Packaging":"Reel","Peak DC Collector Current":"100 mA","Pd - Power Dissipation":"150 mW","Typical Resistor Ratio":"1","Configuration":"Single","Maximum Operating Temperature":"+ 150 C","Brand":"Toshiba","RoHS":"Details","Manufacturer":"Toshiba"}...
1437 Bytes - 13:30:30, 22 October 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
RN1102CT.pdf0.161Request
RN1102MFV.pdf0.991Request
RN1102ACT.pdf0.171Request
RN1102.pdf0.551Request
RN1102FS.pdf0.121Request