Product Datasheet Search Results:
- PRN110241000J
- California Micro Devices
- Isolated resistor termination network
- PRN110241000J/T
- California Micro Devices
- ISOLATED RESISTOR TERMINATION NETWORK
- PRN110241001J
- California Micro Devices
- Isolated resistor termination network
- PRN110241001J/R
- California Micro Devices
- ISOLATED RESISTOR TERMINATION NETWORK
- PRN110241001J/T
- California Micro Devices
- ISOLATED RESISTOR TERMINATION NETWORK
- PRN110241002J
- California Micro Devices
- Isolated resistor termination network
- PRN110241002J/T
- California Micro Devices
- ISOLATED RESISTOR TERMINATION NETWORK
- PRN1102410R0J
- California Micro Devices
- Isolated resistor termination network
- PRN1102410R0J/R
- California Micro Devices
- ISOLATED RESISTOR TERMINATION NETWORK
- PRN1102410R0J/T
- California Micro Devices
- ISOLATED RESISTOR TERMINATION NETWORK
- PRN110242001J
- California Micro Devices
- Isolated resistor termination network
- PRN1102422R0J
- California Micro Devices
- Isolated resistor termination network
Product Details Search Results:
N_a/RN1102
{"Category":"NPN Transistor, Transistor","Amps":"0.1A","MHz":"<1 MHz","Volts":"50V"}...
527 Bytes - 13:30:30, 22 October 2024
Toshiba.co.jp/RN1102
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-2H1A, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"50","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"250 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DU...
1440 Bytes - 13:30:30, 22 October 2024
Toshiba.co.jp/RN1102ACT
{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Mfr Package Description":"CST3, 2-1J1A, 3 PIN","Terminal Form":"NO LEAD","Package Style":"CHIP CARRIER","DC Current Gain-Min (hFE)":"50","Collector Current-Max (IC)":"0.0800 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configuration":"SI...
1373 Bytes - 13:30:30, 22 October 2024
Toshiba.co.jp/RN1102CT
{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Mfr Package Description":"CST3, 2-1J1A, 3 PIN","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.0500 W","Package Style":"CHIP CARRIER","DC Current Gain-Min (hFE)":"60","Collector Current-Max (IC)":"0.0500 A","Collector-emitter Voltage-Max":"20 V","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Packa...
1410 Bytes - 13:30:30, 22 October 2024
Toshiba.co.jp/RN1102FV
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-1L1A, VESM, 3 PIN","Terminal Form":"FLAT","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"250 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configur...
1380 Bytes - 13:30:30, 22 October 2024
Toshiba.co.jp/RN1102,LF(CT
{"Packaging":"Reel","Product Category":"Bipolar Transistors - Pre-Biased","Transistor Polarity":"NPN","Brand":"Toshiba","Pd - Power Dissipation":"100 mW","Mounting Style":"SMD/SMT","Collector- Emitter Voltage VCEO Max":"50 V","Emitter- Base Voltage VEBO":"10 V","Package / Case":"SOT-416","Typical Resistor Ratio":"1","Manufacturer":"Toshiba","DC Collector/Base Gain hfe Min":"30","RoHS":"Details","Continuous Collector Current":"100 mA"}...
1566 Bytes - 13:30:30, 22 October 2024
Toshiba.co.jp/RN1102MFV
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ULTRA SMALL, VESM, 2-1L1A, 3 PIN","Terminal Form":"FLAT","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"50","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configu...
1386 Bytes - 13:30:30, 22 October 2024
Toshiba.co.jp/RN1102MFV,L3F
{"Packaging":"Reel","Product Category":"Bipolar Transistors - Pre-Biased","Transistor Polarity":"NPN","Brand":"Toshiba","Pd - Power Dissipation":"150 mW","Mounting Style":"SMD/SMT","Collector- Emitter Voltage VCEO Max":"50 V","Emitter- Base Voltage VEBO":"10 V","Package / Case":"SOT-723","Typical Resistor Ratio":"1","Manufacturer":"Toshiba","DC Collector/Base Gain hfe Min":"30","RoHS":"Details","Continuous Collector Current":"100 mA"}...
1510 Bytes - 13:30:30, 22 October 2024
Toshiba.co.jp/RN1102MFV,L3F(B
{"Collector Current (DC) ":"0.1(A)","Emitter-Collector Voltage (Max)":"50(V)","Packaging":"Tape and Reel","Power Dissipation":"0.15(W)","Package Type":"VESM","DC Current Gain":"50","Typical Resistor Ratio":"1","Configuration":"Single","Type":"NPN","Typical Input Resistor":"10"}...
1359 Bytes - 13:30:30, 22 October 2024
Toshiba.co.jp/RN1102MFV,L3F(CT
856 Bytes - 13:30:30, 22 October 2024
Toshiba.co.jp/RN1102MFV(TL3,T)
{"Transistor Polarity":"NPN","Collector-Emitter Voltage":"50 V","Mounting":"Surface Mount","Rad Hardened":"No","Package Type":"VESM","DC Current Gain":"50","Pin Count":"3"}...
1253 Bytes - 13:30:30, 22 October 2024
Toshiba.co.jp/RN1102MFV(TPL3)
{"Continuous Collector Current":"100 mA","Factory Pack Quantity":"8000","Product Category":"Bipolar Transistors - Pre-Biased","Transistor Polarity":"NPN","DC Collector/Base Gain hfe Min":"50","Mounting Style":"SMD/SMT","Collector- Emitter Voltage VCEO Max":"50 V","Packaging":"Reel","Peak DC Collector Current":"100 mA","Pd - Power Dissipation":"150 mW","Typical Resistor Ratio":"1","Configuration":"Single","Maximum Operating Temperature":"+ 150 C","Brand":"Toshiba","RoHS":"Details","Manufacturer":"Toshiba"}...
1437 Bytes - 13:30:30, 22 October 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
RN1102CT.pdf | 0.16 | 1 | Request | |
RN1102MFV.pdf | 0.99 | 1 | Request | |
RN1102ACT.pdf | 0.17 | 1 | Request | |
RN1102.pdf | 0.55 | 1 | Request | |
RN1102FS.pdf | 0.12 | 1 | Request |