Product Datasheet Search Results:

RJK6015DPK-00-T0.pdf7 Pages, 102 KB, Original
RJK6015DPK-00-T0
Renesas Technology / Hitachi Semiconductor
Silicon N Channel MOS FET High Speed Power Switching
RJK6015DPK-00-T0.pdf9 Pages, 122 KB, Original
RJK6015DPK-00-T0
Renesas Electronics
21 A, 600 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Renesas.com/RJK6015DPK-00-T0
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"63 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTO...
1539 Bytes - 11:02:53, 29 November 2024

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