Product Datasheet Search Results:
- RFP2N12
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 120V,
- RFP2N12L
- General Electric Solid State
- N-channel logic level power field-effect transistor (LL FET). 120V, 2A.
- RFP2N12
- Harris Semiconductor
- Power MOSFET Data Book 1990
- RFP2N12L
- Harris Semiconductor
- Power MOSFET Data Book 1990
- RFP2N12
- Intersil Corporation
- 2A, 120V and 150V, 1.750 ?, N-Channel Power MOSFETs
- RFP2N12L
- Intersil Corporation
- 2A, 120V, 1.750 ?, Logic Level, N-Channel Power MOSFET
- RFP2N12
- International Rectifier
- RF and BUZ Series Power MOSFETs - N-Channel
Product Details Search Results:
Fairchildsemi.com/RFP2N10L
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO-220-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Series":"-","Standard Package":"50","Supplier Device Package":"TO-220AB","Datasheets":"RFP2N08L, RFP2N10L TO220B03 Pkg Drawing","Rds On (Max) @ Id, Vgs":"1.05 Ohm @ 2A, 5V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"25W","Package / Case":"TO-220-3","Mounting Type":"Through Hole","Drain to Source Voltage (...
1689 Bytes - 17:08:59, 05 March 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
IRFP254.pdf | 0.05 | 1 | Request | |
IRFP264.pdf | 0.05 | 1 | Request | |
IRFP260.pdf | 0.03 | 1 | Request | |
IRFP250.pdf | 0.05 | 1 | Request | |
TRFP240AC.pdf | 0.04 | 1 | Request | |
TRFP24AD.pdf | 0.04 | 1 | Request | |
IRFP2907.pdf | 0.25 | 1 | Request | |
IRFP260M.pdf | 0.62 | 1 | Request | |
IRFP260N.pdf | 0.18 | 1 | Request | |
IRFP250M.pdf | 0.63 | 1 | Request | |
IRFP2907Z.pdf | 0.31 | 1 | Request | |
IRFP250N.pdf | 0.18 | 1 | Request |