Product Datasheet Search Results:
9 Pages, 426 KB, Original- RD02MUS1B
- Mitsubishi Electric & Electronics Usa, Inc.
- UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
8 Pages, 183 KB, Original- RD02MUS1B-101
- Mitsubishi Electric & Electronics Usa, Inc.
- UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
9 Pages, 215 KB, Original- RD02MUS1B-101,T112
- Mitsubishi Electric & Electronics Usa, Inc.
- UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
8 Pages, 183 KB, Original- RD02MUS1B
- Mitsubishi Electric Semiconductor
- Silicon MOSFET Power Transistor 175MHz,520MHz,2W
Product Details Search Results:
Mitsubishichips.com/RD02MUS1B
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"ROHS COMPLIANT PACKAGE-10","Terminal Form":"NO LEAD","Operating Mode":"ENHANCEMENT","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1.5 A","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD"...
1417 Bytes - 16:27:19, 22 January 2025
Mitsubishichips.com/RD02MUS1B-101
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","M...
1518 Bytes - 16:27:19, 22 January 2025
Mitsubishichips.com/RD02MUS1B-101,T112
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"ROHS COMPLIANT PACKAGE-10","Terminal Form":"NO LEAD","Operating Mode":"ENHANCEMENT","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1.5 A","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD"...
1471 Bytes - 16:27:19, 22 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 6ES7131-4RD02-0AB0.pdf | 7.01 | 1 | Request | |
| 6FC9371-6RD02.pdf | 8.13 | 1 | Request | |
| XTAE032C10RD024.pdf | 0.04 | 1 | Request | |
| D26MRD02A1.pdf | 0.04 | 1 | Request | |
| XTAE018C01RD024.pdf | 0.04 | 1 | Request | |
| XTAE050D00RD024.pdf | 0.04 | 1 | Request | |
| XTAR065D11RD024.pdf | 0.04 | 1 | Request | |
| XTAR040D11RD024.pdf | 0.04 | 1 | Request | |
| XTAR025C21RD024.pdf | 0.04 | 1 | Request | |
| XTAR050D11RD024.pdf | 0.04 | 1 | Request | |
| XTAE018C10RD024.pdf | 0.04 | 1 | Request | |
| XTAE032C01RD024.pdf | 0.04 | 1 | Request |
