Datasheet.Directory

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"PLASTIC PACKAGE-3","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"CYLINDRICAL","Transistor Application":"AMPLIFIER","Operating Mode":"DEPLETION","Feedback Cap-Max (Crss)":"1.5 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SI...

{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"JFETs (Junction Field Effect)","Current - Drain (Idss) @ Vds (Vgs=0)":"30\u00b5A @ 10V","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92-3","Voltage - Cutoff (VGS off) @ Id":"600mV @ 1nA","Current Drain (Id) - Max":"-","FET Type":"N-Channel","Datasheets":"PN4117A","Power - Max":"350mW","Standard Package":"2,000","Resistance - RD...

{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"JFETs (Junction Field Effect)","Current - Drain (Idss) @ Vds (Vgs=0)":"30\u00b5A @ 10V","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92-3","Voltage - Cutoff (VGS off) @ Id":"600mV @ 1nA","Current Drain (Id) - Max":"-","FET Type":"N-Channel","Datasheets":"PN4117A","Power - Max":"350mW","Standard Package":"2,000","Resistance - RD...

{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"JFETs (Junction Field Effect)","Current - Drain (Idss) @ Vds (Vgs=0)":"30\u00b5A @ 10V","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92-3","Voltage - Cutoff (VGS off) @ Id":"600mV @ 1nA","Current Drain (Id) - Max":"-","FET Type":"N-Channel","Datasheets":"PN4117A","Power - Max":"350mW","Standard Package":"1,500","Resistance - RD...

{"Mounting Style":"Through Hole","Vds - Drain-Source Breakdown Voltage":"10 V","Transistor Polarity":"N-Channel","Forward Transconductance - Min":"210 uS","Brand":"InterFET","Pd - Power Dissipation":"300 mW","Packaging":"Bulk","Product Category":"JFET","Package \/ Case":"TO-92","Drain-Source Current at Vgs=0":"0.09 mA","Vgs - Gate-Source Breakdown Voltage":"40 V","Configuration":"Single","Gate-Source Cutoff Voltage":"1.8 V","RoHS":"Details","Manufacturer":"InterFET"}...