Product Datasheet Search Results:

PHD3N20E118.pdf5 Pages, 225 KB, Scan
PHD3N20E118
Nxp
3.5 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Nxp.com/PHD3N20E118
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"25 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"200 V","Tran...
1408 Bytes - 13:34:28, 22 October 2024

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