Datasheet.Directory

{"V(RWM) (V) Work.Pk.Rev.Voltage":"50.2","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"89","Package":"DO-41","V(BR) Max.(V)Breakdown Voltage":"68.2","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"62","V(BR) Min.(V)Breakdown Voltage":"55.8","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"4.7","P(PP) Max.(W) Peak Pulse Power":"400"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"53","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"85","Package":"DO-41","V(BR) Max.(V)Breakdown Voltage":"65.1","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"62","V(BR) Min.(V)Breakdown Voltage":"58.9","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"5.0","P(PP) Max.(W) Peak Pulse Power":"400"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"50.2","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"89","Package":"DO-41","V(BR) Max.(V)Breakdown Voltage":"68.2","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"62","V(BR) Min.(V)Breakdown Voltage":"55.8","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"4.7","P(PP) Max.(W) Peak Pulse Power":"400"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"53","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"85","Package":"DO-41","V(BR) Max.(V)Breakdown Voltage":"65.1","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"62","V(BR) Min.(V)Breakdown Voltage":"58.9","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"5.0","P(PP) Max.(W) Peak Pulse Power":"400"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"50.2","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"89","Package":"SOT-223","V(BR) Max.(V)Breakdown Voltage":"68.2","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"62","V(BR) Min.(V)Breakdown Voltage":"55.8","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"4.7","P(PP) Max.(W) Peak Pulse Power":"400"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"53","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"85","Package":"SOT-223","V(BR) Max.(V)Breakdown Voltage":"65.1","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"62","V(BR) Min.(V)Breakdown Voltage":"58.9","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"5.0","P(PP) Max.(W) Peak Pulse Power":"400"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"50.2","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"89","Package":"SOT-223","V(BR) Max.(V)Breakdown Voltage":"68.2","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"62","V(BR) Min.(V)Breakdown Voltage":"55.8","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"4.7","P(PP) Max.(W) Peak Pulse Power":"400"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"53","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"85","Package":"SOT-223","V(BR) Max.(V)Breakdown Voltage":"65.1","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"62","V(BR) Min.(V)Breakdown Voltage":"58.9","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"5.0","P(PP) Max.(W) Peak Pulse Power":"400"}...

{"Category":"Circuit Protection","Voltage - Clamping (Max) @ Ipp":"85V","Operating Temperature":"-55\u00b0C ~ 150\u00b0C (TJ)","Voltage - Breakdown (Min)":"58.9V","Package / Case":"DO-204AL, DO-41, Axial","Type":"Zener","Product Training Modules":"ESD and ESD Suppressors","Applications":"General Purpose","Datasheets":"P4KE-G Series","Standard Package":"5,000","Voltage - Reverse Standoff (Typ)":"53V","Unidirectional Channels":"1","Bidirectional Channels":"-","Current - Peak Pulse (10/1000\u00b5s)":"4.71A","F...

{"Category":"Circuit Protection","Voltage - Clamping (Max) @ Ipp":"85V","Operating Temperature":"-55\u00b0C ~ 150\u00b0C (TJ)","Voltage - Breakdown (Min)":"58.9V","Package / Case":"DO-204AL, DO-41, Axial","Type":"Zener","Product Training Modules":"ESD and ESD Suppressors","Applications":"General Purpose","Datasheets":"P4KE-G Series","Standard Package":"5,000","Voltage - Reverse Standoff (Typ)":"53V","Unidirectional Channels":"-","Bidirectional Channels":"1","Current - Peak Pulse (10/1000\u00b5s)":"4.71A","F...

{"Status":"ACTIVE","Polarity":"UNIDIRECTIONAL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN","Breakdown Voltage-Min":"55.8 V","Terminal Form":"WIRE","Non-rep Peak Rev Power Dis-Max":"400 W","Package Style":"LONG FORM","Breakdown Voltage-Max":"68.8 V","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"1 W","Case Connection":"ISOLATED","Stand-off Voltage":"50.2 V","Terminal Position":"AXIAL","Diode Type":"TRANS VOLTAGE SUPPRESSOR DIODE...

{"Status":"ACTIVE","Polarity":"UNIDIRECTIONAL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN","Breakdown Voltage-Min":"58.9 V","Terminal Form":"WIRE","Non-rep Peak Rev Power Dis-Max":"400 W","Package Style":"LONG FORM","Breakdown Voltage-Max":"65.1 V","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"1 W","Case Connection":"ISOLATED","Stand-off Voltage":"53 V","Terminal Position":"AXIAL","Diode Type":"TRANS VOLTAGE SUPPRESSOR DIODE",...