Datasheet.Directory

{"V(RWM) (V) Work.Pk.Rev.Voltage":"97.2","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"173","Package":"DO-41","V(BR) Max.(V)Breakdown Voltage":"132","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"120","V(BR) Min.(V)Breakdown Voltage":"108","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"2.4","P(PP) Max.(W) Peak Pulse Power":"400"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"102","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"165","Package":"DO-41","V(BR) Max.(V)Breakdown Voltage":"126","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"120","V(BR) Min.(V)Breakdown Voltage":"114","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"2.5","P(PP) Max.(W) Peak Pulse Power":"400"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"97.2","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"173","Package":"DO-41","V(BR) Max.(V)Breakdown Voltage":"132","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"120","V(BR) Min.(V)Breakdown Voltage":"108","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"2.4","P(PP) Max.(W) Peak Pulse Power":"400"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"102","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"165","Package":"DO-41","V(BR) Max.(V)Breakdown Voltage":"126","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"120","V(BR) Min.(V)Breakdown Voltage":"114","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"2.5","P(PP) Max.(W) Peak Pulse Power":"400"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"97.2","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"173","Package":"SOT-223","V(BR) Max.(V)Breakdown Voltage":"132","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"120","V(BR) Min.(V)Breakdown Voltage":"108","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"2.4","P(PP) Max.(W) Peak Pulse Power":"400"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"102","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"165","Package":"SOT-223","V(BR) Max.(V)Breakdown Voltage":"126","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"120","V(BR) Min.(V)Breakdown Voltage":"114","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"2.5","P(PP) Max.(W) Peak Pulse Power":"400"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"97.2","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"173","Package":"SOT-223","V(BR) Max.(V)Breakdown Voltage":"132","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"120","V(BR) Min.(V)Breakdown Voltage":"108","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"2.4","P(PP) Max.(W) Peak Pulse Power":"400"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"102","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"165","Package":"SOT-223","V(BR) Max.(V)Breakdown Voltage":"126","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"120","V(BR) Min.(V)Breakdown Voltage":"114","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"2.5","P(PP) Max.(W) Peak Pulse Power":"400"}...

{"Category":"Circuit Protection","Voltage - Clamping (Max) @ Ipp":"165V","Operating Temperature":"-55\u00b0C ~ 150\u00b0C (TJ)","Voltage - Breakdown (Min)":"114V","Package / Case":"DO-204AL, DO-41, Axial","Type":"Zener","Product Training Modules":"ESD and ESD Suppressors","Applications":"General Purpose","Datasheets":"P4KE-G Series","Standard Package":"5,000","Voltage - Reverse Standoff (Typ)":"102V","Unidirectional Channels":"1","Bidirectional Channels":"-","Current - Peak Pulse (10/1000\u00b5s)":"2.42A","...

{"Category":"Circuit Protection","Voltage - Clamping (Max) @ Ipp":"165V","Operating Temperature":"-55\u00b0C ~ 150\u00b0C (TJ)","Voltage - Breakdown (Min)":"114V","Package / Case":"DO-204AL, DO-41, Axial","Type":"Zener","Product Training Modules":"ESD and ESD Suppressors","Applications":"General Purpose","Datasheets":"P4KE-G Series","Standard Package":"5,000","Voltage - Reverse Standoff (Typ)":"102V","Unidirectional Channels":"-","Bidirectional Channels":"1","Current - Peak Pulse (10/1000\u00b5s)":"2.42A","...

{"Status":"ACTIVE","Polarity":"UNIDIRECTIONAL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN","Breakdown Voltage-Min":"108 V","Terminal Form":"WIRE","Non-rep Peak Rev Power Dis-Max":"400 W","Package Style":"LONG FORM","Breakdown Voltage-Max":"132 V","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"1 W","Case Connection":"ISOLATED","Stand-off Voltage":"97.2 V","Terminal Position":"AXIAL","Diode Type":"TRANS VOLTAGE SUPPRESSOR DIODE",...

{"Status":"ACTIVE","Polarity":"UNIDIRECTIONAL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN","Breakdown Voltage-Min":"114 V","Terminal Form":"WIRE","Non-rep Peak Rev Power Dis-Max":"400 W","Package Style":"LONG FORM","Breakdown Voltage-Max":"126 V","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"1 W","Case Connection":"ISOLATED","Stand-off Voltage":"102 V","Terminal Position":"AXIAL","Diode Type":"TRANS VOLTAGE SUPPRESSOR DIODE","...