Datasheet.Directory: Sale P4KE10 - Offer Electronic Components, Industrial Automation, Process Automation.

American_power_devices/AP4KE10

{"V(RWM) (V) Work.Pk.Rev.Voltage":"8.1","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"15","Package":"DO-41","V(BR) Max.(V)Breakdown Voltage":"11","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"10","V(BR) Min.(V)Breakdown Voltage":"9.0","I(RM) Max.(A) Reverse Current":"10u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"28","P(PP) Max.(W) Peak Pulse Power":"400"}...

942 Bytes - 20:42:06, 03 December 2024

American_power_devices/AP4KE100

{"V(RWM) (V) Work.Pk.Rev.Voltage":"81","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"144","Package":"DO-41","V(BR) Max.(V)Breakdown Voltage":"110","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"100","V(BR) Min.(V)Breakdown Voltage":"90","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"2.9","P(PP) Max.(W) Peak Pulse Power":"400"}...

951 Bytes - 20:42:06, 03 December 2024

American_power_devices/AP4KE100A

{"V(RWM) (V) Work.Pk.Rev.Voltage":"85.5","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"137","Package":"DO-41","V(BR) Max.(V)Breakdown Voltage":"105","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"100","V(BR) Min.(V)Breakdown Voltage":"95","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"3.1","P(PP) Max.(W) Peak Pulse Power":"400"}...

957 Bytes - 20:42:06, 03 December 2024

American_power_devices/AP4KE100C

{"V(RWM) (V) Work.Pk.Rev.Voltage":"81","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"144","Package":"DO-41","V(BR) Max.(V)Breakdown Voltage":"110","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"100","V(BR) Min.(V)Breakdown Voltage":"90","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"2.9","P(PP) Max.(W) Peak Pulse Power":"400"}...

955 Bytes - 20:42:06, 03 December 2024

American_power_devices/AP4KE100CA

{"V(RWM) (V) Work.Pk.Rev.Voltage":"85.5","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"137","Package":"DO-41","V(BR) Max.(V)Breakdown Voltage":"105","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"100","V(BR) Min.(V)Breakdown Voltage":"95","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"3.1","P(PP) Max.(W) Peak Pulse Power":"400"}...

962 Bytes - 20:42:06, 03 December 2024

American_power_devices/AP4KE10A

{"V(RWM) (V) Work.Pk.Rev.Voltage":"8.55","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"14.5","Package":"DO-41","V(BR) Max.(V)Breakdown Voltage":"10.5","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"10","V(BR) Min.(V)Breakdown Voltage":"9.5","I(RM) Max.(A) Reverse Current":"10u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"29","P(PP) Max.(W) Peak Pulse Power":"400"}...

953 Bytes - 20:42:06, 03 December 2024

American_power_devices/AP4KE10C

{"V(RWM) (V) Work.Pk.Rev.Voltage":"8.1","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"15","Package":"DO-41","V(BR) Max.(V)Breakdown Voltage":"11","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"10","V(BR) Min.(V)Breakdown Voltage":"9.0","I(RM) Max.(A) Reverse Current":"10u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"28","P(PP) Max.(W) Peak Pulse Power":"400"}...

946 Bytes - 20:42:06, 03 December 2024

American_power_devices/AP4KE10CA

{"V(RWM) (V) Work.Pk.Rev.Voltage":"8.55","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"14.5","Package":"DO-41","V(BR) Max.(V)Breakdown Voltage":"10.5","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"10","V(BR) Min.(V)Breakdown Voltage":"9.5","I(RM) Max.(A) Reverse Current":"10u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"29","P(PP) Max.(W) Peak Pulse Power":"400"}...

956 Bytes - 20:42:06, 03 December 2024

American_power_devices/ATP4KE10

{"V(RWM) (V) Work.Pk.Rev.Voltage":"8.1","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"15","Package":"SOT-223","V(BR) Max.(V)Breakdown Voltage":"11","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"10","V(BR) Min.(V)Breakdown Voltage":"9.0","I(RM) Max.(A) Reverse Current":"10u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"28","P(PP) Max.(W) Peak Pulse Power":"400"}...

949 Bytes - 20:42:06, 03 December 2024

American_power_devices/ATP4KE100

{"V(RWM) (V) Work.Pk.Rev.Voltage":"81","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"144","Package":"SOT-223","V(BR) Max.(V)Breakdown Voltage":"110","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"100","V(BR) Min.(V)Breakdown Voltage":"90","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"2.9","P(PP) Max.(W) Peak Pulse Power":"400"}...

958 Bytes - 20:42:06, 03 December 2024

American_power_devices/ATP4KE100A

{"V(RWM) (V) Work.Pk.Rev.Voltage":"85.5","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"137","Package":"SOT-223","V(BR) Max.(V)Breakdown Voltage":"105","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"100","V(BR) Min.(V)Breakdown Voltage":"95","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"3.1","P(PP) Max.(W) Peak Pulse Power":"400"}...

965 Bytes - 20:42:06, 03 December 2024

American_power_devices/ATP4KE100C