Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package / Case":"TO-261-4, TO-261AA","Current - Continuous Drain (Id) @ 25\u00b0C":"3.7A (Ta)","Gate Charge (Qg) @ Vgs":"38nC @ 10V","Product Photos":"SOT223-3L","PCN Design/Specification":"Datasheet MSL Updated 2/April/2007","Rds On (Max) @ Id, Vgs":"100 mOhm @ 5.2A, 10V","Datasheets":"NTF5P03T3","FET Type":"MOSFET P-Channel, Metal Oxide","Standard Package":"4,000","Drain to Source Voltage...

{"Category":"MOSFET","Maximum Drain Source Voltage":"30 V","Typical Turn-Off Delay Time":"38|23 ns","Description":"Value","Maximum Continuous Drain Current":"5.2 A","Package":"4SOT-223","Typical Turn-On Delay Time":"10|16 ns","Mounting":"Surface Mount","Typical Rise Time":"33|45 ns","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"100@10V mOhm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"ON Semiconductor","Typical Fall Time":"20|24 ns"}...