Product Datasheet Search Results:
- NDT456PJ23Z
- Fairchild Semiconductor Corporation
- 7.5 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET
- NDT456PJ23ZD84Z
- Fairchild Semiconductor Corporation
- 7.5 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Fairchildsemi.com/NDT456PJ23Z
{"Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"20 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"7.5 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package Shape...
1445 Bytes - 02:19:30, 28 December 2024
Fairchildsemi.com/NDT456PJ23ZD84Z
{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"20 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"7.5 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package...
1475 Bytes - 02:19:30, 28 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
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L_W_BENDTSEN_TESTER.pdf | 1.23 | 1 | Request | |
L_W_AUTOLINE_BENDTSEN_ROUGHNESS.pdf | 0.16 | 1 | Request | |
TDS000516_CABLE_TIE_DETECTABLE_NDT_SERIES.pdf | 0.46 | 1 | Request | |
K3GN-NDT1_24VDC.pdf | 0.43 | 1 | Request | |
K3GN-NDT1-FLK_24VDC.pdf | 0.43 | 1 | Request | |
ASC_TS_SP_300_NDTS.pdf | 0.19 | 1 | Request | |
SCON_85FNDT_R0_EN.pdf | 0.17 | 1 | Request |