Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package / Case":"TO-261-4, TO-261AA","Current - Continuous Drain (Id) @ 25\u00b0C":"7.2A (Ta)","Gate Charge (Qg) @ Vgs":"30nC @ 10V","Product Photos":"SOT223-3L","Product Training Modules":"High Voltage Switches for Power Processing SMPS Power Switch","Rds On (Max) @ Id, Vgs":"35 mOhm @ 7.2A, 10V","Datasheets":"NDT451AN MA04A Pkg Drawing","FET Type":"MOSFET N-Channel, Metal Oxide","Standard...

{"Category":"MOSFET","Maximum Drain Source Voltage":"30 V","Typical Rise Time":"13 ns","Typical Turn-Off Delay Time":"29 ns","Description":"Value","Maximum Continuous Drain Current":"7.2 A","Package":"4SOT-223","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"12 ns","Channel Mode":"Enhancement","Operating Temperature":"-65 to 150 \u00b0C","RDS-on":"35@10V mOhm","Manufacturer":"Fairchild Semiconductor","Typical Fall Time":"10 ns"}...

{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"25 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"7.2 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"REC...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Series":"-","Standard Package":"2,500","Supplier Device Package":"SOT-223-3","Datasheets":"NDT451AN MA04A Pkg Drawing","Rds On (Max) @ Id, Vgs":"35 mOhm @ 7.2A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1.1W","Package / Case":"TO-261-4, TO-261AA","Mounting Type":"Surface Mount","Drain t...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.2 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0350 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","Transist...

{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"25 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"7.2 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package...

{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"25 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"7.2 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package...

{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Type":"GENERAL PURPOSE POWER","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.2 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Package Shape":"RECTANGULAR","Channel Type":"N-CHANNEL","Drain-source On Resistance-Max":"0.0500 ohm","Number of Terminals":"4","DS Breakdown Voltage-Min":"30 V",...

{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Type":"GENERAL PURPOSE POWER","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.2 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Package Shape":"RECTANGULAR","Channel Type":"N-CHANNEL","Drain-source On Resistance-Max":"0.0500 ohm","Number of Terminals":"4","DS Breakdown Voltage-Min":"30 V",...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"7.2(A)","Mounting":"Surface Mount","Operating Temp Range":"-65C to 150C","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"3(W)","Rad Hardened":"No","Package Type":"SOT-223","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"C(iss) Max. (F)":"720p","Absolute Max. Power Diss. (W)":"3.0","V(BR)DSS (V)":"30","g(fs) Max, (S) Trans. conduct,":"11","@V(GS) (V) (Test Condition)":"4.5","t(d)off Max. (s) Off time":"50n","r(DS)on Max. (Ohms)":".05","@V(DS) (V) (Test Condition)":"15","I(DM) Max (A)(@25°C)":"25","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"7.2","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"3.0","V(GS)th Min. (V)":"1.0","Package":"SOT-223","Military":"N","td(on) Max (s) On ti...