Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.8V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"3.7A, 2.9A","Gate Charge (Qg) @ Vgs":"25nC @ 10V","Product Photos":"8-SOIC","PCN Design/Specification":"Mold Compound 12/Dec/2007","Product Training Modules":"High Voltage Switches for Power Processing SMPS Power Switch","Rds On (Max) @ Id, Vgs":"80 mOhm @ 1A, 10V","Datasheets":"NDS9952A","FET ...

{"Category":"MOSFET","Maximum Drain Source Voltage":"30 V","Typical Turn-Off Delay Time":"21@N Channel|21@P Channel ns","Description":"Value","Maximum Continuous Drain Current":"3.7@N Channel|2.9@P Channel A","Package":"8SOIC N","Typical Turn-On Delay Time":"10@N Channel|9@P Channel ns","Mounting":"Surface Mount","Typical Rise Time":"13@N Channel|21@P Channel ns","Channel Type":"N|P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"80@10V@N Channel|130@10V@P Channel mOhm",...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.7 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"15 A","Channel Type":"N-CHANNEL AND P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdo...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.7 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"15 A","Channel Type":"N-CHANNEL AND P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdo...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.7 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"15 A","Channel Type":"N-CHANNEL AND P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.7 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"15 A","Channel Type":"N-CHANNEL AND P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdo...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.7 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"15 A","Channel Type":"N-CHANNEL AND P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...

{"Polarity":"N/P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2(W)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...