Product Datasheet Search Results:

FT6164L-100LSM.pdf17 Pages, 357 KB, Original
FT6164L-100LSM
Force Technologies Ltd.
8K X 8 STANDARD SRAM, 100 ns, CQCC28
FT6164L-100LSMB.pdf17 Pages, 357 KB, Original
FT6164L-100LSMB
Force Technologies Ltd.
8K X 8 STANDARD SRAM, 100 ns, CQCC28
FT6164L-100LSMBLF.pdf17 Pages, 357 KB, Original
FT6164L-100LSMBLF
Force Technologies Ltd.
8K X 8 STANDARD SRAM, 100 ns, CQCC28
FT6164L-100LSMLF.pdf17 Pages, 357 KB, Original
FT6164L-100LSMLF
Force Technologies Ltd.
8K X 8 STANDARD SRAM, 100 ns, CQCC28
PSMN035-100LS.pdf14 Pages, 331 KB, Original
PSMN035-100LS
Nxp Semiconductors
MOSFET N-CH QFN3333 - PSMN035-100LS,115
PSMN035-100LS,115.pdf14 Pages, 331 KB, Original
PSMN035-100LS,115
Nxp Semiconductors
MOSFET N-CH QFN3333 - PSMN035-100LS,115
P4C164-100LSC.pdf16 Pages, 1138 KB, Original
P4C164-100LSC
Pyramid Semiconductor Corp.
8K X 8 STANDARD SRAM, 100 ns, CQCC28
P4C164-100LSCLF.pdf16 Pages, 1138 KB, Original
P4C164-100LSCLF
Pyramid Semiconductor Corp.
8K X 8 STANDARD SRAM, 100 ns, CQCC28
P4C164-100LSI.pdf16 Pages, 1138 KB, Original
P4C164-100LSI
Pyramid Semiconductor Corp.
8K X 8 STANDARD SRAM, 100 ns, CQCC28
P4C164-100LSILF.pdf16 Pages, 1138 KB, Original
P4C164-100LSILF
Pyramid Semiconductor Corp.
8K X 8 STANDARD SRAM, 100 ns, CQCC28
P4C164-100LSM.pdf16 Pages, 1138 KB, Original
P4C164-100LSM
Pyramid Semiconductor Corp.
8K X 8 STANDARD SRAM, 100 ns, CQCC28
P4C164-100LSMB.pdf16 Pages, 997 KB, Original
P4C164-100LSMB
Pyramid Semiconductor Corp.
8K X 8 STANDARD SRAM, 100 ns, CQCC28

Product Details Search Results:

Forcetechnologies.co.uk/FT6164L-100LSM
{"Terminal Pitch":"1.27 mm","Terminal Form":"NO LEAD","Operating Temperature-Max":"125 Cel","Number of Words Code":"8K","Supply Voltage-Nom (Vsup)":"5 V","Temperature Grade":"MILITARY","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"-55 Cel","Number of Words":"8192 words","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Number of Functions":"1","Access Time-Max (tACC)":"100 ns","Memory Density":"65536 deg","Supply Voltage-Max (Vsup)":"5.5 V","Supply Voltage-Min (Vsup)":"...
1573 Bytes - 12:02:38, 02 March 2025
Forcetechnologies.co.uk/FT6164L-100LSMB
{"Terminal Pitch":"1.27 mm","Terminal Form":"NO LEAD","Operating Temperature-Max":"125 Cel","Number of Words Code":"8K","Supply Voltage-Nom (Vsup)":"5 V","Temperature Grade":"MILITARY","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"-55 Cel","Number of Words":"8192 words","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Number of Functions":"1","Access Time-Max (tACC)":"100 ns","Memory Density":"65536 deg","Supply Voltage-Max (Vsup)":"5.5 V","Supply Voltage-Min (Vsup)":"...
1579 Bytes - 12:02:38, 02 March 2025
Forcetechnologies.co.uk/FT6164L-100LSMBLF
{"Terminal Pitch":"1.27 mm","Terminal Form":"NO LEAD","Operating Temperature-Max":"125 Cel","Number of Words Code":"8K","Supply Voltage-Nom (Vsup)":"5 V","Temperature Grade":"MILITARY","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"-55 Cel","Number of Words":"8192 words","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Number of Functions":"1","Access Time-Max (tACC)":"100 ns","Memory Density":"65536 deg","Supply Voltage-Max (Vsup)":"5.5 V","Supply Voltage-Min (Vsup)":"...
1607 Bytes - 12:02:38, 02 March 2025
Forcetechnologies.co.uk/FT6164L-100LSMLF
{"Terminal Pitch":"1.27 mm","Terminal Form":"NO LEAD","Operating Temperature-Max":"125 Cel","Number of Words Code":"8K","Supply Voltage-Nom (Vsup)":"5 V","Temperature Grade":"MILITARY","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"-55 Cel","Number of Words":"8192 words","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Number of Functions":"1","Access Time-Max (tACC)":"100 ns","Memory Density":"65536 deg","Supply Voltage-Max (Vsup)":"5.5 V","Supply Voltage-Min (Vsup)":"...
1602 Bytes - 12:02:38, 02 March 2025
Nxp.com/PSMN035-100LS
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"37 mJ","Package Shape":"SQUARE","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0320 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"109 A","Channel Type":"N-CHANNEL","FET ...
1577 Bytes - 12:02:38, 02 March 2025
Nxp.com/PSMN035-100LS,115
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 1mA","Related Products":"732-1114-2-ND - FIXED IND 470NH 26A 0.9 MOHM SMD 732-1114-1-ND - FIXED IND 470NH 26A 0.9 MOHM SMD 732-1114-6-ND - FIXED IND 470NH 26A 0.9 MOHM SMD","Package / Case":"8-VDFN Exposed Pad","Current - Continuous Drain (Id) @ 25\u00b0C":"27A (Tc)","Gate Charge (Qg) @ Vgs":"23nC @ 10V","Product Photos":"8-VDFN","Rds On (Max) @ Id, Vgs":"32 mOhm @ 10A, 10V","Datasheets":"PSMN035-100LS","FET Ty...
1841 Bytes - 12:02:38, 02 March 2025
Pyramidsemiconductor.com/P4C164-100LSC
{"Terminal Pitch":"1.27 mm","Terminal Form":"NO LEAD","Operating Temperature-Max":"70 Cel","Number of Words Code":"8K","Supply Voltage-Nom (Vsup)":"5 V","Temperature Grade":"COMMERCIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"0.0 Cel","Number of Words":"8192 words","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Number of Functions":"1","Access Time-Max (tACC)":"100 ns","Memory Density":"65536 deg","Supply Voltage-Max (Vsup)":"5.5 V","Supply Voltage-Min (Vsup)":...
1593 Bytes - 12:02:38, 02 March 2025
Pyramidsemiconductor.com/P4C164-100LSCLF
{"Terminal Pitch":"1.27 mm","Terminal Form":"NO LEAD","Operating Temperature-Max":"70 Cel","Number of Words Code":"8K","Supply Voltage-Nom (Vsup)":"5 V","Temperature Grade":"COMMERCIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"0.0 Cel","Number of Words":"8192 words","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Number of Functions":"1","Access Time-Max (tACC)":"100 ns","Memory Density":"65536 deg","Supply Voltage-Max (Vsup)":"5.5 V","Supply Voltage-Min (Vsup)":...
1602 Bytes - 12:02:38, 02 March 2025
Pyramidsemiconductor.com/P4C164-100LSI
{"Terminal Pitch":"1.27 mm","Terminal Form":"NO LEAD","Operating Temperature-Max":"85 Cel","Number of Words Code":"8K","Supply Voltage-Nom (Vsup)":"5 V","Temperature Grade":"INDUSTRIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"-40 Cel","Number of Words":"8192 words","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Number of Functions":"1","Access Time-Max (tACC)":"100 ns","Memory Density":"65536 deg","Supply Voltage-Max (Vsup)":"5.5 V","Supply Voltage-Min (Vsup)":...
1595 Bytes - 12:02:38, 02 March 2025
Pyramidsemiconductor.com/P4C164-100LSILF
{"Terminal Pitch":"1.27 mm","Terminal Form":"NO LEAD","Operating Temperature-Max":"85 Cel","Number of Words Code":"8K","Supply Voltage-Nom (Vsup)":"5 V","Temperature Grade":"INDUSTRIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"-40 Cel","Number of Words":"8192 words","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Number of Functions":"1","Access Time-Max (tACC)":"100 ns","Memory Density":"65536 deg","Supply Voltage-Max (Vsup)":"5.5 V","Supply Voltage-Min (Vsup)":...
1604 Bytes - 12:02:38, 02 March 2025
Pyramidsemiconductor.com/P4C164-100LSM
{"Terminal Finish":"TIN LEAD","Terminal Pitch":"1.27 mm","Terminal Form":"NO LEAD","Operating Temperature-Max":"125 Cel","Number of Words Code":"8K","Supply Voltage-Nom (Vsup)":"5 V","Temperature Grade":"MILITARY","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"-55 Cel","Number of Words":"8192 words","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Number of Functions":"1","Access Time-Max (tACC)":"100 ns","Memory Density":"65536 deg","Supply Voltage-Max (Vsup)":"5.5 V",...
1623 Bytes - 12:02:38, 02 March 2025
Pyramidsemiconductor.com/P4C164-100LSMB
{"Terminal Finish":"TIN LEAD","Terminal Pitch":"1.27 mm","Terminal Form":"NO LEAD","Operating Temperature-Max":"125 Cel","Number of Words Code":"8K","Supply Voltage-Nom (Vsup)":"5 V","Temperature Grade":"MILITARY","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"-55 Cel","Number of Words":"8192 words","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Number of Functions":"1","Access Time-Max (tACC)":"100 ns","Memory Density":"65536 deg","Supply Voltage-Max (Vsup)":"5.5 V",...
1629 Bytes - 12:02:38, 02 March 2025

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