Product Datasheet Search Results:

MV1656.pdf1 Pages, 33 KB, Original
MV1656
Aeroflex / Metelics
180 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
MV1656.pdf1 Pages, 74 KB, Scan
MV1656
Api Electronics Group
VHF-UHF BAND, 180 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
MV1656B.pdf1 Pages, 74 KB, Scan
MV1656B
Api Electronics Group
VHF-UHF BAND, 180 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
MV1656C.pdf1 Pages, 74 KB, Scan
MV1656C
Api Electronics Group
VHF-UHF BAND, 180 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
MV1656.pdf1 Pages, 42 KB, Scan
MV1656
Crystalonics
Voltage Variable Capacitance Diodes Data Book 1976
MV1656.pdf2 Pages, 51 KB, Scan
MV1656
Motorola
Semiconductor Data Library Volume 3 1974
MV1656.pdf1 Pages, 33 KB, Original
MV1656
Knox Semiconductor, Inc.
ABRUPT VARACTOR DIODES
MV1656.pdf2 Pages, 117 KB, Scan
MV1656
Msi Electronics, Inc.
Abrupt / Hyperabrupt Glass Packaged Tuning Diodes
MV1656B.pdf2 Pages, 117 KB, Scan
MV1656B
Msi Electronics, Inc.
20V Vrrm, 180pF Capacitance Varactor Diode
MV1656BCHIP.pdf2 Pages, 117 KB, Scan
MV1656BCHIP
Msi Electronics, Inc.
20V Vrrm, 180pF Capacitance Varactor Diode
MV1656C.pdf2 Pages, 117 KB, Scan
MV1656C
Msi Electronics, Inc.
20V Vrrm, 180pF Capacitance Varactor Diode
MV1656CCHIP.pdf2 Pages, 117 KB, Scan
MV1656CCHIP
Msi Electronics, Inc.
20V Vrrm, 180pF Capacitance Varactor Diode

Product Details Search Results:

Aeroflex.com/MV1656
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Terminal Form":"WIRE","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"180 pF","Power Dissipation Limit-Max":"0.4750 W","Case Connection":"ISOLATED","Quality Factor-Min":"200","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape"...
1273 Bytes - 18:21:48, 10 October 2024
Apitech.com/MV1656
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"20 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.6","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"180 pF","Power Dissipation Limit-Max":"0.5000 W","Case Connection":"ISOLATED","Quality Factor-Min":...
1391 Bytes - 18:21:48, 10 October 2024
Apitech.com/MV1656B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"20 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.6","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"180 pF","Power Dissipation Limit-Max":"0.5000 W","Case Connection":"ISOLATED","Quality Factor-Min":"...
1394 Bytes - 18:21:48, 10 October 2024
Apitech.com/MV1656C
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"20 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.6","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"2 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"180 pF","Power Dissipation Limit-Max":"0.5000 W","Case Connection":"ISOLATED","Quality Factor-Min":"...
1394 Bytes - 18:21:48, 10 October 2024
Various/MV1656B
{"C1\/C2 Min. Capacitance Ratio":"2.6","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"200","Package":"DO-14","P(D) Max.(W) Power Dissipation":"500m","@Freq. (Hz) (Test Condition)":"20M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"180p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
838 Bytes - 18:21:48, 10 October 2024
Various/MV1656BCHIP
{"C1\/C2 Min. Capacitance Ratio":"2.6","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"200","Package":"Chip","@Freq. (Hz) (Test Condition)":"20M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"180p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
817 Bytes - 18:21:48, 10 October 2024
Various/MV1656C
{"C1\/C2 Min. Capacitance Ratio":"2.6","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"200","Package":"DO-14","P(D) Max.(W) Power Dissipation":"500m","@Freq. (Hz) (Test Condition)":"20M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"180p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
838 Bytes - 18:21:48, 10 October 2024
Various/MV1656CCHIP
{"C1\/C2 Min. Capacitance Ratio":"2.6","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"200","Package":"Chip","@Freq. (Hz) (Test Condition)":"20M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"180p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
817 Bytes - 18:21:48, 10 October 2024
Various/MV1656CHIP
{"C1\/C2 Min. Capacitance Ratio":"2.6","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"200","Package":"Chip","@Freq. (Hz) (Test Condition)":"20M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"180p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
812 Bytes - 18:21:48, 10 October 2024