Product Datasheet Search Results:

MV1634.pdf1 Pages, 33 KB, Original
MV1634
Aeroflex / Metelics
22 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
MV1634.pdf1 Pages, 74 KB, Scan
MV1634
Api Electronics Group
VHF-UHF BAND, 22 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
MV1634B.pdf1 Pages, 74 KB, Scan
MV1634B
Api Electronics Group
VHF-UHF BAND, 22 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
MV1634C.pdf1 Pages, 74 KB, Scan
MV1634C
Api Electronics Group
VHF-UHF BAND, 22 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
MV1634.pdf1 Pages, 42 KB, Scan
MV1634
Crystalonics
Voltage Variable Capacitance Diodes Data Book 1976
MV1634.pdf2 Pages, 213 KB, Original
MV1634.pdf1 Pages, 33 KB, Original
MV1634.pdf2 Pages, 117 KB, Scan
MV1634
Msi Electronics, Inc.
Abrupt / Hyperabrupt Glass Packaged Tuning Diodes
MV1634B.pdf2 Pages, 117 KB, Scan
MV1634B
Msi Electronics, Inc.
20V Vrrm, 22pF Capacitance Varactor Diode
MV1634BCHIP.pdf2 Pages, 117 KB, Scan
MV1634BCHIP
Msi Electronics, Inc.
20V Vrrm, 22pF Capacitance Varactor Diode
MV1634C.pdf2 Pages, 117 KB, Scan
MV1634C
Msi Electronics, Inc.
20V Vrrm, 22pF Capacitance Varactor Diode
MV1634CCHIP.pdf2 Pages, 117 KB, Scan
MV1634CCHIP
Msi Electronics, Inc.
20V Vrrm, 22pF Capacitance Varactor Diode

Product Details Search Results:

Aeroflex.com/MV1634
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"20 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"22 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"250","Terminal Position":"...
1343 Bytes - 01:52:28, 21 December 2024
Apitech.com/MV1634
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"20 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"22 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"25...
1386 Bytes - 01:52:28, 21 December 2024
Apitech.com/MV1634B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"20 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"22 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"250...
1389 Bytes - 01:52:28, 21 December 2024
Apitech.com/MV1634C
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"20 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"2 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"22 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"250...
1388 Bytes - 01:52:28, 21 December 2024
Various/MV1634B
{"C1/C2 Min. Capacitance Ratio":"2.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"250","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"22p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
835 Bytes - 01:52:28, 21 December 2024
Various/MV1634BCHIP
{"C1/C2 Min. Capacitance Ratio":"2.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"250","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"22p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
815 Bytes - 01:52:28, 21 December 2024
Various/MV1634C
{"C1/C2 Min. Capacitance Ratio":"2.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"250","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"22p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
836 Bytes - 01:52:28, 21 December 2024
Various/MV1634CCHIP
{"C1/C2 Min. Capacitance Ratio":"2.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"250","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"22p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
816 Bytes - 01:52:28, 21 December 2024
Various/MV1634CHIP
{"C1/C2 Min. Capacitance Ratio":"2.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"250","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"22p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
810 Bytes - 01:52:28, 21 December 2024

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