Product Datasheet Search Results:

MV1624.pdf1 Pages, 33 KB, Original
MV1624
Aeroflex / Metelics
10 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
MV1624.pdf1 Pages, 74 KB, Scan
MV1624
Api Electronics Group
VHF-UHF BAND, 10 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
MV1624B.pdf1 Pages, 74 KB, Scan
MV1624B
Api Electronics Group
VHF-UHF BAND, 10 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
MV1624C.pdf1 Pages, 74 KB, Scan
MV1624C
Api Electronics Group
VHF-UHF BAND, 10 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
MV1624.pdf1 Pages, 42 KB, Scan
MV1624
Crystalonics
Voltage Variable Capacitance Diodes Data Book 1976
MV1624.pdf2 Pages, 213 KB, Original
MV1624.pdf1 Pages, 33 KB, Original
MV1624.pdf2 Pages, 117 KB, Scan
MV1624
Msi Electronics, Inc.
Abrupt / Hyperabrupt Glass Packaged Tuning Diodes
MV1624B.pdf2 Pages, 117 KB, Scan
MV1624B
Msi Electronics, Inc.
20V Vrrm, 10pF Capacitance Varactor Diode
MV1624BCHIP.pdf2 Pages, 117 KB, Scan
MV1624BCHIP
Msi Electronics, Inc.
20V Vrrm, 10pF Capacitance Varactor Diode
MV1624C.pdf2 Pages, 117 KB, Scan
MV1624C
Msi Electronics, Inc.
20V Vrrm, 10pF Capacitance Varactor Diode
MV1624CCHIP.pdf2 Pages, 117 KB, Scan
MV1624CCHIP
Msi Electronics, Inc.
20V Vrrm, 10pF Capacitance Varactor Diode

Product Details Search Results:

Aeroflex.com/MV1624
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"20 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"300","Terminal Position":"...
1338 Bytes - 20:16:20, 04 December 2024
Apitech.com/MV1624
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"20 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"30...
1384 Bytes - 20:16:20, 04 December 2024
Apitech.com/MV1624B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"20 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"300...
1388 Bytes - 20:16:20, 04 December 2024
Apitech.com/MV1624C
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"20 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"2 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"300...
1389 Bytes - 20:16:20, 04 December 2024
Msi.com/MV1624A
{"Status":"Discontinued","Semiconductor Material":"Silicon","Q Factor Min.":"300","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
738 Bytes - 20:16:20, 04 December 2024
Various/MV1624B
{"C1/C2 Min. Capacitance Ratio":"2.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"300","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
836 Bytes - 20:16:20, 04 December 2024
Various/MV1624BCHIP
{"C1/C2 Min. Capacitance Ratio":"2.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"300","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
815 Bytes - 20:16:20, 04 December 2024
Various/MV1624C
{"C1/C2 Min. Capacitance Ratio":"2.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"300","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
836 Bytes - 20:16:20, 04 December 2024
Various/MV1624CCHIP
{"C1/C2 Min. Capacitance Ratio":"2.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"300","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
816 Bytes - 20:16:20, 04 December 2024
Various/MV1624CHIP
{"C1/C2 Min. Capacitance Ratio":"2.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"300","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
811 Bytes - 20:16:20, 04 December 2024

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