Product Datasheet Search Results:

MT57V512H36EF-5.pdf25 Pages, 379 KB, Original
MT57V512H36EF-5
Cypress Semiconductor Corp.
512K X 36 DDR SRAM, 2.4 ns, PBGA165
MT57V512H36EF-5.pdf22 Pages, 369 KB, Original
MT57V512H36EF-5
Micron
18Mb DDR SRAM 4-Word Burst

Product Details Search Results:

Cypress.com/MT57V512H36EF-5
{"Terminal Finish":"TIN LEAD","Terminal Pitch":"1 mm","Terminal Form":"BALL","Operating Temperature-Max":"70 Cel","Number of Words Code":"512K","Supply Voltage-Nom (Vsup)":"2.5 V","Temperature Grade":"COMMERCIAL","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Operating Temperature-Min":"0.0 Cel","Number of Words":"524288 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Access Time-Max (tACC)":"2.4 ns","Memory Density":"1.89E7 deg","Supply Voltage-Max (Vsup)":"2.6 V","Supply ...
1606 Bytes - 03:52:14, 20 October 2024

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