Product Datasheet Search Results:
2 Pages, 131 KB, Original- MJ10016
- Advanced Semiconductor, Inc.
- 50 A, NPN, Si, POWER TRANSISTOR
4 Pages, 181 KB, Original- MJ10016
- Mospec Semiconductor
- POWER TRANSISTORS(50A,400-500V,250W)
2 Pages, 81 KB, Original- MJ10016
- Nte Electronics, Inc.
- Darlington Bipolar Transistor;
6 Pages, 118 KB, Original- MJ10016
- On Semiconductor
- NPN SILICON POWER DARLINGTON TRANSISTORS
8 Pages, 97 KB, Original- MJ10016G
- On Semiconductor
- TRANS DARLINGTON NPN 500V 50A 3TO-204AE
1 Pages, 162 KB, Scan- MJ10016
- Semiconductor Technology, Inc.
- NPN PNP High Voltage Silicon, High Power Transistors
4 Pages, 298 KB, Scan- MJ10016
- Solid State
- Bipolar (BJT) Single Transistor, Darlington, NPN, 500 V, 250 W, 50 A, 25
Product Details Search Results:
Advancedsemiconductor.com/MJ10016
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"MODIFIED TO-3, 2 PIN","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"10","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"10 MHz","Collector Current-Max (IC)":"50 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Number of Terminals":"2","...
1231 Bytes - 03:17:26, 15 November 2024
Freescale.com/MJ10016HX
{"t(s) Max. (s) Storage time.":"2.5u","V(CE)sat Max.(V)":"5.0","Absolute Max. Power Diss. (W)":"250","h(FE) Min. Static Current Gain":"25","I(C) Abs.(A) Collector Current":"50","I(CBO) Max. (A)":"250u","Package":"TO-204AE","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"10","V(BR)CEO (V)":"500","Military":"N","@I(C) (A) (Test Condition)":"50","Semiconductor Material":"Silicon","t(r) Max. (s) Rise time":"1.0u","t(f) Max. (s) Fall time.":"1.0u","t(d) Max. (s) Delay time.":"300n"}...
973 Bytes - 03:17:26, 15 November 2024
Freescale.com/MJ10016HXV
{"t(s) Max. (s) Storage time.":"2.5u","V(CE)sat Max.(V)":"5.0","Absolute Max. Power Diss. (W)":"250","h(FE) Min. Static Current Gain":"25","I(C) Abs.(A) Collector Current":"50","I(CBO) Max. (A)":"250u","Package":"TO-204AE","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"10","V(BR)CEO (V)":"500","Military":"N","@I(C) (A) (Test Condition)":"50","Semiconductor Material":"Silicon","t(r) Max. (s) Rise time":"1.0u","t(f) Max. (s) Fall time.":"1.0u","t(d) Max. (s) Delay time.":"300n"}...
977 Bytes - 03:17:26, 15 November 2024
N_a/MJ10016
{"Category":"Transistor, Darlington Transistor","Amps":"50A","MHz":">10 MHz","Volts":"700V"}...
546 Bytes - 03:17:26, 15 November 2024
Nteinc.com/MJ10016
{"Collector Emitter Voltage V(br)ceo:":"500 V","Transistor Polarity:":"NPN","MSL:":"-","No. of Pins:":"2","DC Collector Current:":"50 A","Power Dissipation Pd:":"250 W","Transistor Case Style:":"TO-3","Operating Temperature Max:":"200 \u00b0C","DC Current Gain hFE:":"25","Operating Temperature Min:":"-65 \u00b0C","SVHC:":"No SVHC (17-Dec-2014)","Transition Frequency Typ ft:":"-"}...
1332 Bytes - 03:17:26, 15 November 2024
Solidstateinc.com/MJ10016
{"Collector Emitter Voltage V(br)ceo:":"500 V","Transistor Polarity:":"NPN","MSL:":"-","No. of Pins:":"2","DC Collector Current:":"50 A","Power Dissipation Pd:":"250 W","Transistor Case Style:":"TO-3","Operating Temperature Max:":"200 \u00b0C","DC Current Gain hFE:":"25","Operating Temperature Min:":"-65 \u00b0C","SVHC:":"No SVHC (15-Jun-2015)","Transition Frequency Typ ft:":"-"}...
1352 Bytes - 03:17:26, 15 November 2024
Documentation and Support
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