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MG50N6ES40.pdf4 Pages, 312 KB, Original

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Toshiba.co.jp/MG50N1BS1
{"V(BR)GES (V)":"20","Absolute Max. Power Diss. (W)":"300","t(r) Max. (s) Rise time":"1.0u","V(BR)CES (V)":"1.0k","I(C) Abs.(A) Collector Current":"50","@I(C) (A) (Test Condition)":"50","Circuits Per Package":"1","@V(CES) (V) (Test Condition)":"1.0k","t(f) Max. (s) Fall time.":"1.0u","I(GES) Max. (A)":"500n","V(CE)sat Max.(V)":"5.0","Package":"MODULE-var","@V(GE) (Test Condition)":"15","@V(GES) (V) (Test Condition)":"20","I(CES) Min. (A)":"1.0m"}...
938 Bytes - 13:56:29, 24 November 2024
Toshiba.co.jp/MG50N2CK1
{"@I(C) (A) (Test Condition)":"50","Isolated Case (Y/N)":"Yes","Absolute Max. Power Diss. (W)":"350","I(C) Abs.(A) Collector Current":"50","t(f) Max. (s) Fall time.":"5.0u","@VCE (test)":"5.0","Package":"MODULE-var","@I(B) (A) (Test Condition)":"1.0","Circuits Per Package":"1","V(BR)CEO (V)":"900","V(CE)sat Max.(V)":"2.5","R(thJC) (°C/W)":"350m","V(BR)CBO (V)":"1.1k","h(FE) Min. Static Current Gain":"100"}...
918 Bytes - 13:56:29, 24 November 2024
Toshiba.co.jp/MG50N2YS1
{"V(BR)GES (V)":"20","Absolute Max. Power Diss. (W)":"300","t(r) Max. (s) Rise time":"1.0u","V(BR)CES (V)":"1.0k","I(C) Abs.(A) Collector Current":"50","@I(C) (A) (Test Condition)":"50","Circuits Per Package":"1","@V(CES) (V) (Test Condition)":"1.0k","t(f) Max. (s) Fall time.":"1.0u","I(GES) Max. (A)":"500n","V(CE)sat Max.(V)":"5.0","Package":"MODULE-var","@V(GE) (Test Condition)":"15","@V(GES) (V) (Test Condition)":"20","I(CES) Min. (A)":"1.0m"}...
937 Bytes - 13:56:29, 24 November 2024

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