Datasheet.Directory

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Mfr Package Description":"ROHS COMPLIANT, PLASTIC, SURFACE MOUNT, DIP-6","Operating Temperature-Min":"-55 Cel","Coll-emtr Bkdn Voltage-Min":"30 V","Current Transfer Ratio-Nom":"1000 %","Operating Temperature-Max":"100 Cel","Number of Functions":"1","Optoelectronic Device Type":"DARLINGTON OUTPUT","Isolation Voltage-Max":"5300 V","EU RoHS Compliant":"Yes","Collector Dark Current-Max":"100 nA","Input Cont Forward Current-Max":"60 mA","Con...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Mfr Package Description":"ROHS COMPLIANT, PLASTIC, SURFACE MOUNT, DIP-6","Operating Temperature-Min":"-55 Cel","Coll-emtr Bkdn Voltage-Min":"30 V","Current Transfer Ratio-Nom":"1000 %","Operating Temperature-Max":"100 Cel","Number of Functions":"1","Optoelectronic Device Type":"DARLINGTON OUTPUT","Isolation Voltage-Max":"5300 V","EU RoHS Compliant":"Yes","Collector Dark Current-Max":"100 nA","Input Cont Forward Current-Max":"60 mA","Con...

{"P(D) Max.(W) Power Dissipation":"210m","CTR Min.(%)Current Trans.Ratio":"100","V(F) Max.(V) Forward Voltage":"1.5","Status":"Discontinued","I(C) Abs.(A) Collector Current":"150m","t(resp) Max.(s) Response Time":"100u","Number of Channels":"1","Package":"FP","@V(CE) (V) (Test Condition)":"10","V(BR)CEO (V) Breakdown Voltage":"30","@I(F) (A) (Test Condition)":"10m","Viso Max.(V) Isolation Voltage":"1.5k","I(F) Max. (A) Forward Current":"60m","Semiconductor Material":"GaAs : Si","I(CEO) Max. (A) Dark Out.Cur...

{"P(D) Max.(W) Power Dissipation":"210m","CTR Min.(%)Current Trans.Ratio":"100","V(F) Max.(V) Forward Voltage":"1.5","Status":"Discontinued","I(C) Abs.(A) Collector Current":"150m","t(resp) Max.(s) Response Time":"100u","Number of Channels":"1","Package":"FP","@V(CE) (V) (Test Condition)":"10","V(BR)CEO (V) Breakdown Voltage":"30","@I(F) (A) (Test Condition)":"10m","Viso Max.(V) Isolation Voltage":"1.5k","I(F) Max. (A) Forward Current":"60m","Semiconductor Material":"GaAs : Si","I(CEO) Max. (A) Dark Out.Cur...

{"Package":"SO","@V(CE) (V) (Test Condition)":"10","P(D) Max.(W) Power Dissipation":"210m","V(BR)CEO (V) Breakdown Voltage":"30","CTR Min.(%)Current Trans.Ratio":"100","@I(F) (A) (Test Condition)":"10m","I(F) Max. (A) Forward Current":"60m","V(F) Max.(V) Forward Voltage":"1.5","Viso Max.(V) Isolation Voltage":"1.5k","I(C) Abs.(A) Collector Current":"150m","Semiconductor Material":"GaAs : Si","t(resp) Max.(s) Response Time":"100u","Number of Channels":"1","I(CEO) Max. (A) Dark Out.Cur.":"100n"}...