Product Datasheet Search Results:
- K4C89183AF-GCF5
- Samsung
- 288Mbit Network-DRAM 250MHz 144-FBGA - K4C89183AF-GCF5
- K4C89183AF-GCF50
- Samsung Semiconductor Division
- 16M X 18 DDR DRAM, 0.6 ns, PBGA60
- K4C89183AF-GCF5
- Samsung Electronics
- K4C89183AF-GCF5
Product Details Search Results:
Samsung.com/K4C89183AF-GCF5
{"Terminal Finish":"TIN LEAD","Access Mode":"FOUR BANK PAGE BURST","Terminal Form":"BALL","Operating Temperature-Max":"70 Cel","Number of Words Code":"16M","Supply Voltage-Nom (Vsup)":"2.5 V","Temperature Grade":"COMMERCIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"0.0 Cel","Number of Words":"1.68E7 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"3.02E8 deg","Supply Voltage-Max (Vsup)":"2.62 V","Number of Ports":"1","Supply Volta...
1581 Bytes - 21:51:04, 04 January 2025
Samsung.com/K4C89183AF-GCF50
{"Terminal Finish":"TIN LEAD","Terminal Pitch":"1 mm","Access Mode":"FOUR BANK PAGE BURST","Terminal Form":"BALL","Operating Temperature-Max":"70 Cel","Number of Words Code":"16M","Supply Voltage-Nom (Vsup)":"2.5 V","Temperature Grade":"COMMERCIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"0.0 Cel","Number of Words":"1.68E7 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"3.02E8 deg","Supply Voltage-Max (Vsup)":"2.62 V","Number of ...
1632 Bytes - 21:51:04, 04 January 2025