Datasheet.Directory

{"Status":"DISCONTINUED","Contact Finish - Mating":"TIN LEAD","Contact Finish - Termination":"TIN LEAD","Number of Rows Loaded":"1","Terminal Pitch":"2 mm","Option":"GENERAL PURPOSE","Mounting Type":"BOARD","Contact Gender":"MALE","Mounting Style":"STRAIGHT","Total Number of Contacts":"20","Manufacturer Series":"M22","Termination Type":"SURFACE MOUNT","Connection Type":"TWO PART BOARD CONNECTOR","Contact Material":"NOT SPECIFIED"}...

{"@V(DS) (V) (Test Condition)":"5.0","Efficiency Min. (%)":"22","V(GS)off Max. (V)":"7.0","@Freq. (Hz) (Test Condition)":"20G","Semiconductor Material":"GaAs","I(DSS) Max. (A)":"270m","g(fs) Max, (S) Trans. conduct,":"75m","Package":"Chip","V(BR)DSS (V)":"12","P(D) Max.(W) Power Dissipation":"1.5","Operating Power Output Typ.(W)":"330m","g(fs) Min. (S) Trans. conduct.":"50m","@V(DD) (V) (Test Condition)":"8.0","V(BR)GSS (V)":"10","I(DSS) Min. (A)":"110m"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Series":"-","Package / Case":"SC-83","Supplier Device Package":"4-LDPAK","Datasheets":"RJK2006DPE, DPF, DPJ","Rds On (Max) @ Id, Vgs":"59 mOhm @ 20A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"100W","Standard Package":"1,000","Drain to Source Voltage (Vdss)":"200V","Current - Continuous Drain (Id) @ 25\u00...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"40 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0590 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"100 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...

{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"40 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0590 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"100 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"200 V","Transistor Application":"SWITCHING","Surf...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LDPAK-3","Pulsed Drain Current-Max (IDM)":"100 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"IN-LINE","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"40 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package S...

{"C(iss) Max. (F)":"1.2n","Absolute Max. Power Diss. (W)":"65","g(fs) Max, (S) Trans. conduct,":"2.9","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"3.0","@V(DS) (V) (Test Condition)":"10","I(DM) Max (A)(@25°C)":"10","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"1.7","V(BR)GSS (V)":"30","@I(D) (A) (Test Condition)":"2.5","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-252var","Military":"N","I(DSS) Max. (A)":"250u","@(VDS) (V...

{"P(O)rad Min.(W)Rad. Out. Power":"75m","V(R) Max.(V) Reverse Voltage":"3.0","I(F) Max. (A) Forward Current":"50m","Semiconductor Material":"GaAs","Package":"LED-8d","Peak Wavelength (m)":"940n","Half-Intensity Beam Angle(Deg)":"20","V(F) Max.(V) Forward Voltage":"1.2"}...

{"Status":"ACTIVE","Resistor Type":"RESISTOR","Manufacturer Series":"GWK200(2%)"}...

{"Status":"ACTIVE","Resistor Type":"RESISTOR","Manufacturer Series":"GWK200(5%)"}...

{"Status":"ACTIVE","Resistor Type":"RESISTOR","Manufacturer Series":"GWK200(2%)"}...