Product Datasheet Search Results:
- JANTXV2N6802
- Defense Supply Center Columbus
- N-Channel FET
- JANTXV2N6802U
- Defense Supply Center Columbus
- N-Channel FET
- JANTXV2N6802
- Infineon Technologies Ag
- Trans MOSFET N-CH 500V 2.5A 3-Pin TO-39
- JANTXV2N6802
- International Rectifier
- 2.5 A, 500 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
- JANTXV2N6802U
- International Rectifier
- 2.5 A, 500 V, 1.725 ohm, N-CHANNEL, Si, POWER, MOSFET
- JANTXV2N6802
- Microsemi Corp.
- 2.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39
- JANTXV2N6802U
- Microsemi Corporation
- N Channel MOSFET; Package: U;
- JANTXV2N6802
- Omnirel
- N-channel enhancement mode MOSFET power transistor
- JANTXV2N6802
- Semicoa
- POWER, FET
Product Details Search Results:
Infineon.com/JANTXV2N6802
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Continuous Drain Current":"2.5(A)","Mounting":"Through Hole","Drain-Source On-Volt":"500(V)","Power Dissipation":"25(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1390 Bytes - 12:03:38, 26 November 2024
Irf.com/JANTXV2N6802
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.3500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"11 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...
1513 Bytes - 12:03:38, 26 November 2024
Irf.com/JANTXV2N6802U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"0.3100 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.72 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"11 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICON...
1559 Bytes - 12:03:38, 26 November 2024
Microsemi.com/JANTXV2N6802
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.6 Ohm @ 2.5A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/557","Package / Case":"TO-205AF Metal Can","Supplier Device Package":"TO-205AF (TO-39)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98, 6800,02 2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Sourc...
1706 Bytes - 12:03:38, 26 November 2024
Microsemi.com/JANTXV2N6802U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.6 Ohm @ 2.5A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/557","Package / Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vds...
1602 Bytes - 12:03:38, 26 November 2024
Semicoa.com/JANTXV2N6802
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE POWER"}...
707 Bytes - 12:03:38, 26 November 2024
Documentation and Support
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