Product Datasheet Search Results:
23 Pages, 167 KB, Original- JANTXV2N6796
- Defense Supply Center Columbus
- N-Channel FET
23 Pages, 167 KB, Original- JANTXV2N6796U
- Defense Supply Center Columbus
- N-Channel FET
7 Pages, 867 KB, Original- GRP-DATA-JANTXV2N6796
- International Rectifier
- Trans MOSFET N-CH 100V 8A 3-Pin TO-39
5 Pages, 45 KB, Original- JANTXV2N6796
- International Rectifier
- 8 A, 100 V, 0.195 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
7 Pages, 198 KB, Original- JANTXV2N6796U
- International Rectifier
- 8 A, 100 V, 0.207 ohm, N-CHANNEL, Si, POWER, MOSFET
9 Pages, 987 KB, Original- JANTXV2N6796
- Microsemi Corp.
- 8 A, 100 V, 0.195 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
10 Pages, 1040 KB, Original- JANTXV2N6796U
- Microsemi Corp.
- 8 A, 100 V, 0.195 ohm, N-CHANNEL, Si, POWER, MOSFET
5 Pages, 45 KB, Original- JANTXV2N6796
- Omnirel
- N-channel enhancement mode MOSFET power transistor
3 Pages, 569 KB, Original- JANTXV2N6796
- Semicoa
- POWER, FET
Product Details Search Results:
Irf.com/GRP-DATA-JANTXV2N6796
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"25(W)","Continuous Drain Current":"8(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1486 Bytes - 10:48:49, 18 December 2024
Irf.com/JANTXV2N6796
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"4.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1950 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"...
1511 Bytes - 10:48:49, 18 December 2024
Irf.com/JANTXV2N6796U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"134 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2070 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...
1552 Bytes - 10:48:49, 18 December 2024
Microsemi.com/JANTXV2N6796
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"195 mOhm @ 8A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/557","Package / Case":"TO-205AF Metal Can","Supplier Device Package":"TO-205AF (TO-39)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98, 6800,02","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"100...
1593 Bytes - 10:48:49, 18 December 2024
Microsemi.com/JANTXV2N6796U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"195 mOhm @ 8A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/557","Package / Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss...
1609 Bytes - 10:48:49, 18 December 2024
Semicoa.com/JANTXV2N6796
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE POWER"}...
707 Bytes - 10:48:49, 18 December 2024
Documentation and Support
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| 1646796.pdf | 0.16 | 1 | Request |
