Product Datasheet Search Results:
17 Pages, 74 KB, Original- JANTXV2N6661
- Defense Supply Center Columbus
- N-Channel FET
6 Pages, 128 KB, Original- JANTXV2N6661
- Vishay Presicion Group
- 860 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD
6 Pages, 128 KB, Original- JANTXV2N6661P
- Vishay Presicion Group
- 860 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD
Product Details Search Results:
Vishay.com/JANTXV2N6661
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.7250 W","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.8600 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"90 V","Transistor Application":...
1500 Bytes - 22:46:04, 20 September 2024
Vishay.com/JANTXV2N6661P
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.7250 W","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.8600 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"90 V","Transistor Applicat...
1512 Bytes - 22:46:04, 20 September 2024
