Product Datasheet Search Results:

JANTXV1N5811.pdf5 Pages, 290 KB, Original
JANTXV1N5811
Microchip Technology
Rectifier Diode Switching 150V 6A 30ns 2-Pin Case E Bag
JANTXV1N5811US.pdf5 Pages, 262 KB, Original
JANTXV1N5811US
Microchip Technology
Rectifier Diode Switching 150V 6A 30ns 2-Pin E-MELF Bag
GRP-DATA-JANTXV1N5811US.pdf5 Pages, 262 KB, Original
GRP-DATA-JANTXV1N5811US
Microsemi
Rectifier Diode Switching 150V 6A 30ns 2-Pin E-MELF Bag
JANTXV1N5811.pdf6 Pages, 288 KB, Original
JANTXV1N5811
Microsemi
Rectifiers
JANTXV1N5811R.pdf6 Pages, 254 KB, Scan
JANTXV1N5811R
Microsemi Corp.
6 A, SILICON, RECTIFIER DIODE
JANTXV1N5811URS.pdf7 Pages, 127 KB, Original
JANTXV1N5811URS
Microsemi Corp.
3 A, 150 V, SILICON, RECTIFIER DIODE
JANTXV1N5811US.pdf3 Pages, 147 KB, Original
JANTXV1N5811US
Microsemi Corp.
3 A, SILICON, RECTIFIER DIODE

Product Details Search Results:

Microchip.com/GRP-DATA-JANTXV1N5811US
925 Bytes - 07:03:40, 22 November 2024
Microchip.com/JANTXV1N5811
{"Peak Rep Rev Volt":"150(V)","Peak Non-Repetitive Surge Current":"125(A)","Peak Reverse Recovery Time":"30(ns)","Mounting":"Through Hole","Packaging":"Bag","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Package Type":"Case E","Maximum Forward Current":"6000(mA)","Peak Forward Voltage":"0.875(V)","Peak Reverse Current":"5(uA)","Configuration":"Single","Pin Count":"2"}...
1453 Bytes - 07:03:40, 22 November 2024
Microchip.com/JANTXV1N5811US
{"Peak Reverse Current":"5(uA)","Peak Non-Repetitive Surge Current":"125(A)","Peak Reverse Recovery Time":"30(ns)","Mounting":"Surface Mount","Rad Hardened":"Yes","Packaging":"Bag","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Peak Forward Voltage":"0.875(V)","Maximum Forward Current":"6000(mA)","Peak Rep Rev Volt":"150(V)","Configuration":"Single","Pin Count":"2","Package Type":"E-MELF"}...
1469 Bytes - 07:03:40, 22 November 2024
Microsemi.com/GRP-DATA-JANTXV1N5811US
{"Packaging":"Bag","Peak Non-Repetitive Surge Current":"125(A)","Operating Temperature Classification":"Military","Peak Reverse Recovery Time":"30(ns)","Mounting":"Surface Mount","Rad Hardened":"No","Peak Reverse Current":"5(uA)","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Package Type":"E-MELF","Maximum Forward Current":"6000(mA)","Peak Forward Voltage":"0.875(V)","Peak Rep Rev Volt":"150(V)","Configuration":"Single","Pin Count":"2"}...
1522 Bytes - 07:03:40, 22 November 2024
Microsemi.com/JANTXV1N5811
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"5\u00b5A @ 150V","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Family":"Diodes, Rectifiers - Single","Standard Package":"1","Series":"Military, MIL-PRF-19500/477","Capacitance @ Vr, F":"65pF @ 10V, 1MHz","Supplier Device Package":"*","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,9,11","Current - Average Rectified (Io)":"3A","Operating Temperature - Junction":"-65\u00b0C ~ 175\u00b0C","Package /...
1551 Bytes - 07:03:40, 22 November 2024
Microsemi.com/JANTXV1N5811R
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Terminal Form":"WIRE","Package Style":"LONG FORM","Number of Phases":"1","Diode Element Material":"SILICON","Application":"FAST RECOVERY","Average Forward Current-Max":"6 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","Reverse Recovery Time-Max":"0.0300 us","Number of El...
1204 Bytes - 07:03:40, 22 November 2024
Microsemi.com/JANTXV1N5811URS
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"5\u00b5A @ 150V","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Family":"Diodes, Rectifiers - Single","Standard Package":"100","Series":"Military, MIL-PRF-19500/477","Capacitance @ Vr, F":"60pF @ 10V, 1MHz","Supplier Device Package":"B, SQ-MELF","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,09,11 US/URS","Current - Average Rectified (Io)":"3A","Operating Temperature - Junction":"-65\u00b0C ~ 175...
1601 Bytes - 07:03:40, 22 November 2024
Microsemi.com/JANTXV1N5811US
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"5\u00b5A @ 150V","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Family":"Diodes, Rectifiers - Single","Standard Package":"1","Series":"Military, MIL-PRF-19500/477","Capacitance @ Vr, F":"60pF @ 10V, 1MHz","Supplier Device Package":"B, SQ-MELF","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,09,11 US/URS","Current - Average Rectified (Io)":"3A","Operating Temperature - Junction":"-65\u00b0C ~ 175\u...
1592 Bytes - 07:03:40, 22 November 2024
Semtech.com/DATA-JANTXV1N5811US
906 Bytes - 07:03:40, 22 November 2024
Semtech.com/DNU-DATA-JANTXV1N5811US
919 Bytes - 07:03:40, 22 November 2024
Semtech.com/JANTXV1N5811
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Mfr Package Description":"HERMETIC SEALED, G112, 2 PIN","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"150 V","Number of Phases":"1","Diode Element Material":"SILICON","Application":"SUPER FAST SOFT RECOVERY","Average Forward Current-Max":"1.7 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":...
1319 Bytes - 07:03:40, 22 November 2024
Semtech.com/JANTXV1N5811T
768 Bytes - 07:03:40, 22 November 2024

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