Product Datasheet Search Results:

JANTX2N6847.pdf7 Pages, 875 KB, Original
JANTX2N6847
Infineon Technologies Ag
Trans MOSFET P-CH 200V 2.5A 3-Pin TO-39
JANTX2N6847.pdf7 Pages, 130 KB, Original
JANTX2N6847
International Rectifier
2.5 A, 200 V, 1.725 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
JANTX2N6847U.pdf7 Pages, 135 KB, Original
JANTX2N6847U
International Rectifier
2.1 A, 200 V, 1.725 ohm, P-CHANNEL, Si, POWER, MOSFET
JANTX2N6847.pdf6 Pages, 293 KB, Scan
JANTX2N6847
Microsemi Corp.
2.5 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-39
JANTX2N6847.pdf3 Pages, 520 KB, Original

Product Details Search Results:

Infineon.com/JANTX2N6847
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"2.5(A)","Mounting":"Through Hole","Drain-Source On-Volt":"200(V)","Power Dissipation":"20(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1457 Bytes - 16:23:46, 23 January 2025
Irf.com/JANTX2N6847
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"180 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.72 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"...
1478 Bytes - 16:23:46, 23 January 2025
Irf.com/JANTX2N6847U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"180 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.72 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"8.4 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDU...
1549 Bytes - 16:23:46, 23 January 2025
Microsemi.com/JANTX2N6847
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.5 ohm","Number of Terminals":"3","DS Breakdown ...
1264 Bytes - 16:23:46, 23 January 2025
Semicoa.com/JANTX2N6847
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...
716 Bytes - 16:23:46, 23 January 2025

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