Product Datasheet Search Results:

JANTX2N6798U.pdf23 Pages, 167 KB, Original
JANTX2N6798U.pdf7 Pages, 198 KB, Original
JANTX2N6798U
International Rectifier
5.5 A, 200 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET
JANTX2N6798U.pdf10 Pages, 1040 KB, Original
JANTX2N6798U
Microsemi Corp.
5.5 A, 200 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Irf.com/JANTX2N6798U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"98 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDU...
1548 Bytes - 21:31:56, 20 September 2024
Microsemi.com/JANTX2N6798U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"420 mOhm @ 5.5A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/557","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (...
1597 Bytes - 21:31:56, 20 September 2024