Product Datasheet Search Results:
23 Pages, 167 KB, Original- JANTX2N6798
- Defense Supply Center Columbus
- N-Channel FET
23 Pages, 167 KB, Original- JANTX2N6798U
- Defense Supply Center Columbus
- N-Channel FET
5 Pages, 45 KB, Original- JANTX2N6798
- Infineon Technologies Ag
- Trans MOSFET N-CH 200V 5.5A 3-Pin TO-39
5 Pages, 45 KB, Original- JANTX2N6798
- International Rectifier
- 5.5 A, 200 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
7 Pages, 198 KB, Original- JANTX2N6798U
- International Rectifier
- 5.5 A, 200 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET
9 Pages, 987 KB, Original- JANTX2N6798
- Microsemi Corp.
- 5.5 A, 200 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
10 Pages, 1040 KB, Original- JANTX2N6798U
- Microsemi Corp.
- 5.5 A, 200 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET
5 Pages, 45 KB, Original- JANTX2N6798
- Omnirel
- N-channel enhancement mode MOSFET power transistor
3 Pages, 569 KB, Original- JANTX2N6798
- Semicoa
- POWER, FET
Product Details Search Results:
Infineon.com/JANTX2N6798
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"25(W)","Continuous Drain Current":"5.5(A)","Mounting":"Through Hole","Drain-Source On-Volt":"200(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1440 Bytes - 05:21:10, 28 December 2024
Irf.com/JANTX2N6798
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"2 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-M...
1507 Bytes - 05:21:10, 28 December 2024
Irf.com/JANTX2N6798U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"98 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDU...
1548 Bytes - 05:21:10, 28 December 2024
Microsemi.com/JANTX2N6798
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"420 mOhm @ 5.5A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/557","Package / Case":"TO-205AF Metal Can","Supplier Device Package":"TO-205AF (TO-39)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98, 6800,02","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"2...
1581 Bytes - 05:21:10, 28 December 2024
Microsemi.com/JANTX2N6798U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"420 mOhm @ 5.5A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/557","Package / Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vd...
1597 Bytes - 05:21:10, 28 December 2024
Semicoa.com/JANTX2N6798
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE POWER"}...
701 Bytes - 05:21:10, 28 December 2024
Documentation and Support
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