Product Datasheet Search Results:
23 Pages, 167 KB, Original- JANTX2N6796
- Defense Supply Center Columbus
- N-Channel FET
23 Pages, 167 KB, Original- JANTX2N6796U
- Defense Supply Center Columbus
- N-Channel FET
5 Pages, 45 KB, Original- JANTX2N6796
- International Rectifier
- 8 A, 100 V, 0.195 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
7 Pages, 198 KB, Original- JANTX2N6796U
- International Rectifier
- 8 A, 100 V, 0.207 ohm, N-CHANNEL, Si, POWER, MOSFET
10 Pages, 985 KB, Original- JANTX2N6796
- Microsemi
- MOSFET
10 Pages, 1040 KB, Original- JANTX2N6796U
- Microsemi Corp.
- 8 A, 100 V, 0.195 ohm, N-CHANNEL, Si, POWER, MOSFET
5 Pages, 45 KB, Original- JANTX2N6796
- Omnirel
- N-channel enhancement mode MOSFET power transistor
3 Pages, 569 KB, Original- JANTX2N6796
- Semicoa
- POWER, FET
Product Details Search Results:
Irf.com/JANTX2N6796
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"4.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1950 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-M...
1510 Bytes - 13:32:55, 22 September 2024
Irf.com/JANTX2N6796U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"134 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2070 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...
1547 Bytes - 13:32:55, 22 September 2024
Microsemi.com/JANTX2N6796
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"195 mOhm @ 8A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/557","Package \/ Case":"TO-205AD, TO-39-3 Metal Can","Supplier Device Package":"TO-205AF (TO-39)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98, 6800,02","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (...
1594 Bytes - 13:32:55, 22 September 2024
Microsemi.com/JANTX2N6796U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"195 mOhm @ 8A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/557","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vd...
1601 Bytes - 13:32:55, 22 September 2024
Semicoa.com/JANTX2N6796
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE POWER"}...
701 Bytes - 13:32:55, 22 September 2024
