Product Datasheet Search Results:
7 Pages, 919 KB, Original- JANTX2N6792
- Infineon Technologies Ag
- Trans MOSFET N-CH 400V 2A 3-Pin TO-39
7 Pages, 195 KB, Original- JANTX2N6792
- International Rectifier
- 2 A, 400 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
7 Pages, 375 KB, Original- JANTX2N6792U
- International Rectifier
- 1.8 A, 400 V, 2.07 ohm, N-CHANNEL, Si, POWER, MOSFET
6 Pages, 293 KB, Scan- JANTX2N6792
- Microsemi Corp.
- 2 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39
3 Pages, 579 KB, Original- JANTX2N6792
- Semicoa
- POWER, FET
Product Details Search Results:
Infineon.com/JANTX2N6792
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"20(W)","Continuous Drain Current":"2(A)","Mounting":"Through Hole","Drain-Source On-Volt":"400(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1452 Bytes - 03:01:12, 25 November 2024
Irf.com/JANTX2N6792
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.2420 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.9 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"...
1472 Bytes - 03:01:12, 25 November 2024
Irf.com/JANTX2N6792U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"0.1850 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"2.07 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"7.2 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICO...
1551 Bytes - 03:01:12, 25 November 2024
Microsemi.com/JANTX2N6792
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.8 ohm","Number of Terminals":"3","DS Breakdown Vo...
1262 Bytes - 03:01:12, 25 November 2024
Semicoa.com/JANTX2N6792
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE POWER"}...
702 Bytes - 03:01:12, 25 November 2024
Documentation and Support
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