Did you mean: JANSR2N7431
Product Datasheet Search Results:
9 Pages, 93 KB, Original- JANSR2N7439
- Fairchild Semiconductor
- Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
8 Pages, 59 KB, Original- JANSR2N7439
- Intersil Corporation
- Formerly Available As FSL923A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
Product Details Search Results:
Irf.com/JANSR2N7430T1
{"Status":"DISCONTINUED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"200 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Number of Terminals":"3","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"70 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configuration":"SINGLE W...
1400 Bytes - 07:10:57, 21 January 2025
Irf.com/JANSR2N7431
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0210 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"140 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1509 Bytes - 07:10:57, 21 January 2025
Irf.com/JANSR2N7431D
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0210 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"284 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1515 Bytes - 07:10:57, 21 January 2025
Irf.com/JANSR2N7431U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0180 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"300 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1551 Bytes - 07:10:57, 21 January 2025
Irf.com/JANSR2N7432
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"201 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"500 mJ","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configuration":"SINGL...
1390 Bytes - 07:10:57, 21 January 2025
Irf.com/JANSR2N7432U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"51 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"204 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1555 Bytes - 07:10:57, 21 January 2025
Irf.com/JANSR2N7433
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0770 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"140 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1517 Bytes - 07:10:57, 21 January 2025
Irf.com/JANSR2N7433U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"43 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0770 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"172 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1537 Bytes - 07:10:57, 21 January 2025
Irf.com/JANSR2N7434
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"124 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"500 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"31 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package S...
1427 Bytes - 07:10:57, 21 January 2025
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
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