Product Datasheet Search Results:
- JANS2N6768
- Defense Supply Center Columbus
- N-Channel Silicon FET
- JANS2N6768
- Microsemi Corp.
- 14 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
Product Details Search Results:
Microsemi.com/JANS2N6768
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3000 ohm","Number of Terminals":"2","DS Brea...
1262 Bytes - 12:41:58, 26 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
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186768.pdf | 0.05 | 1 | Request | |
8066768.pdf | 0.17 | 1 | Request | |
8067680.pdf | 0.16 | 1 | Request | |
156768.pdf | 0.23 | 1 | Request | |
8116768.pdf | 0.14 | 1 | Request | |
556768.pdf | 0.15 | 1 | Request | |
546768.pdf | 0.18 | 1 | Request | |
FE_6768919B.pdf | 0.71 | 1 | Request | |
ET_5856768E.pdf | 0.42 | 1 | Request | |
KDGVM_3_676803_10_MF_531312.pdf | 0.29 | 1 | Request | |
YOKOGAWA_29AE6768.pdf | 0.07 | 1 | Request | |
SI_109776768.pdf | 0.90 | 1 | Request |