Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"TrenchP\u2122","Package / Case":"TO-268-3, D\u00b3Pak (2 Leads + Tab), TO-268AA","Supplier Device Package":"TO-268","Datasheets":"IXT(T,H)68P20T","Rds On (Max) @ Id, Vgs":"55 mOhm @ 34A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"568W","Standard Package":"30","Drain to Source Voltage (Vdss)":"20...

{"Polarity":"P","Gate-Source Voltage (Max)":"\u00b115(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"68(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"200(V)","Power Dissipation":"568(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-268","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"2500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"68 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0550 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"200 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"200 V",...