Product Datasheet Search Results:
12 Pages, 1094 KB, Original- IXTP2N100A
- Ixys Corporation
- High Voltage Power MOSFETs
12 Pages, 1094 KB, Original- IXTP2N100A
- Ixys Corporation
- High Voltage Power MOSFETs
4 Pages, 262 KB, Scan- IXTP2N100A
- Zilog
- 2 A, 1000 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Ixys.com/IXTP2N100A
{"C(iss) Max. (F)":"900p","Absolute Max. Power Diss. (W)":"75","r(DS)on Max. (Ohms)":"6.0","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.0","@(VDS) (V) (Test Condition)":"20","Package":"TO-220AB","I(DSS) Min. (A)":"200u","Military":"N","t(r) Max. (s) Rise time":"45n","V(BR)DSS (V)":"1.0k","t(f) Max. (s) Fall time.":"20n","g(fs) Min. (S) Trans. conduct.":"800m","I(D) Abs. Drain Current (A)":"2.0"}...
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Zilog.com/IXTP2N100A
{"Terminal Finish":"PURE TIN","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"8 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Break...
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