Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Series":"TrenchP\u2122","Package / Case":"TO-264-3, TO-264AA","Supplier Device Package":"TO-264 (IXTK)","Rds On (Max) @ Id, Vgs":"30 mOhm @ 60A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"1040W","Standard Package":"25","Drain to Source Voltage (Vdss)":"200V","Current - Continuous Drain (Id) @ 25\u00b0C"...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b115(V)","Channel Mode":"Enhancement","Power Dissipation":"1040(W)","Continuous Drain Current":"120(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-264AA","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"3000 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"120 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"400 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"200...