Datasheet.Directory

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"42A","Mounting Type":"Surface Mount","Family":"IGBTs - Single","Switching Energy":"1.35mJ (on), 440\u00b5J (off)","Series":"GenX3\u2122","Package / Case":"TO-268-3, D\u00b3Pak (2 Leads + Tab), TO-268AA","Vce(on) (Max) @ Vge, Ic":"5V @ 15V, 20A","Voltage - Collector Emitter Breakdown (Max)":"1400V","Gate Charge":"88nC","Reverse Recovery Time (trr)":"70ns","Td (on/off) @ 25\u00b0C":"19ns/110ns","Power - Max":"250W","Supplier Devic...

{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Turn-off Time-Nom (toff)":"524 ns","Collector Current-Max (IC)":"42 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"35 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"1400 V","Channel Type":"N-CHANNEL","Transistor Applicati...