Did you mean: IXFT26N50
Product Datasheet Search Results:
4 Pages, 146 KB, Original- IXFT26N50Q
- Ixys
- MOSFET N-CH 500V 26A TO-268 - IXFT26N50Q
2 Pages, 117 KB, Original- IXFT26N55Q
- Ixys Corporation
- HiPerFET Power MOSFET Q-Class
2 Pages, 71 KB, Original- IXFT26N60
- Ixys Corporation
- HiPerFET Power MOSFETs
5 Pages, 197 KB, Original- IXFT26N60P
- Ixys
- MOSFET N-CH 600V 26A TO-268 D3 - IXFT26N60P
2 Pages, 98 KB, Original- IXFT26N60Q
- Ixys
- MOSFET N-CH 600V 26A TO-268 - IXFT26N60Q
2 Pages, 71 KB, Original- IXFT26N60
- Ixys Corporation
- HiPerFET Power MOSFETs
5 Pages, 116 KB, Original- IXFT26N50P
- Zilog
- 26 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
4 Pages, 595 KB, Original- IXFT26N50Q
- Zilog
- 26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
5 Pages, 197 KB, Original- IXFT26N60P
- Zilog
- 26 A, 600 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
Product Details Search Results:
Ixys.com/IXFT26N50
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 4mA","Series":"HiPerFET\u2122","Package / Case":"TO-268-3, D\u00b3Pak (2 Leads + Tab), TO-268AA","Supplier Device Package":"TO-268","Datasheets":"IXFx2xN50","Rds On (Max) @ Id, Vgs":"200 mOhm @ 13A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"300W","Standard Package":"30","Drain to Source Voltage (Vdss)":"500V","Curre...
1373 Bytes - 13:56:27, 03 January 2025
Ixys.com/IXFT26N50Q
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 4mA","Series":"HiPerFET\u2122","Package / Case":"TO-268-3, D\u00b3Pak (2 Leads + Tab), TO-268AA","Supplier Device Package":"TO-268","Datasheets":"IXF(H,T)2(4,6)N50Q","Rds On (Max) @ Id, Vgs":"200 mOhm @ 13A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"300W","Standard Package":"30","Drain to Source Voltage (Vdss)":"5...
1400 Bytes - 13:56:27, 03 January 2025
Ixys.com/IXFT26N60
{"C(iss) Max. (F)":"5.0n","Absolute Max. Power Diss. (W)":"360","g(fs) Max, (S) Trans. conduct,":"18","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"110n","r(DS)on Max. (Ohms)":".25","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"104","I(GSS) Max. (A)":"200n","g(fs) Min. (S) Trans. conduct.":"11","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"13","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.5","V(GS)th Min. (V)":"2.0","Package":"TO-268","Military":"N","td(...
1252 Bytes - 13:56:27, 03 January 2025
Ixys.com/IXFT26N60P
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 4mA","Series":"PolarHV\u2122","Package / Case":"TO-268-3, D\u00b3Pak (2 Leads + Tab), TO-268AA","Supplier Device Package":"TO-268","Datasheets":"IXF(H,T,V)26N60P/PS","Rds On (Max) @ Id, Vgs":"270 mOhm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"460W","Standard Package":"30","Drain to Source Voltage (Vdss)":"6...
1437 Bytes - 13:56:27, 03 January 2025
Ixys.com/IXFT26N60Q
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 4mA","Series":"HiPerFET\u2122","Package / Case":"TO-268-3, D\u00b3Pak (2 Leads + Tab), TO-268AA","Supplier Device Package":"TO-268","Datasheets":"IXF(H,T)26N60Q","Rds On (Max) @ Id, Vgs":"250 mOhm @ 13A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"360W","Standard Package":"30","Drain to Source Voltage (Vdss)":"600V"...
1394 Bytes - 13:56:27, 03 January 2025
Zilog.com/IXFT26N50
{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...
1485 Bytes - 13:56:27, 03 January 2025
Zilog.com/IXFT26N50P
{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"1000 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"78 A","Channel Type":"N-CHANNEL","FET Tec...
1534 Bytes - 13:56:27, 03 January 2025
Zilog.com/IXFT26N50Q
{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"1500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Te...
1542 Bytes - 13:56:27, 03 January 2025
Zilog.com/IXFT26N60
{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"1500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Te...
1529 Bytes - 13:56:27, 03 January 2025
Zilog.com/IXFT26N60P
{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"1200 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"65 A","Channel Type":"N-CHANNEL","FET Tec...
1536 Bytes - 13:56:27, 03 January 2025
Zilog.com/IXFT26N60Q
{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"1500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Te...
1529 Bytes - 13:56:27, 03 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IXFT26N100XHV.pdf | 0.14 | 1 | Request |
