Product Datasheet Search Results:
2 Pages, 53 KB, Original- IXFH80N10Q
- Ixys
- MOSFET N-CH 100V 80A TO-247AD - IXFH80N10Q
5 Pages, 201 KB, Scan- IXFH80N10Q
- Zilog
- 80 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Product Details Search Results:
Ixys.com/IXFH80N10
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"IXXH50N60C3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 4mA","Series":"HiPerFET\u2122","Standard Package":"30","Supplier Device Package":"TO-247AD (IXFH)","Datasheets":"IXF(H,T)80N10","Rds On (Max) @ Id, Vgs":"12.5 mOhm @ 40A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"300W","Package / Case":"TO-247-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"100V",...
1451 Bytes - 11:41:54, 28 February 2025
Ixys.com/IXFH80N10Q
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"IXXH50N60C3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 4mA","Input Capacitance (Ciss) @ Vds":"4500pF @ 25V","Series":"HiPerFET\u2122","Standard Package":"30","Supplier Device Package":"TO-247AD (IXFH)","Datasheets":"IXF(H,T)80N10Q","Rds On (Max) @ Id, Vgs":"15 mOhm @ 40A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"360W","Package ...
1669 Bytes - 11:41:54, 28 February 2025
Zilog.com/IXFH80N10
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"2500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"80 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0125 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"320 A","Channel Type":"N-CHAN...
1521 Bytes - 11:41:54, 28 February 2025
Zilog.com/IXFH80N10Q
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"1500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"80 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0150 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"320 A","Channel Type":"N-CHAN...
1526 Bytes - 11:41:54, 28 February 2025
