Product Datasheet Search Results:
- IXFH80N085
- Ixys
- MOSFET N-CH 85V 80A TO-247 - IXFH80N085
- IXFH80N085
- Zilog
- 85 A, 80 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Product Details Search Results:
Ixys.com/IXFH80N08
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"IXXH50N60C3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 4mA","Series":"HiPerFET\u2122","Standard Package":"30","Supplier Device Package":"TO-247AD (IXFH)","Datasheets":"IXF(H,T)80N08","Rds On (Max) @ Id, Vgs":"9 mOhm @ 40A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"300W","Package / Case":"TO-247-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"80V","Cur...
1445 Bytes - 10:58:09, 18 February 2025
Ixys.com/IXFH80N085
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"IXXH50N60C3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 4mA","Series":"HiPerFET\u2122","Standard Package":"30","Supplier Device Package":"TO-247AD (IXFH)","Datasheets":"IXF(H,T)80N085","Rds On (Max) @ Id, Vgs":"9 mOhm @ 40A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"300W","Package / Case":"TO-247-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"85V","Cu...
1455 Bytes - 10:58:09, 18 February 2025
Zilog.com/IXFH80N08
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-247, 3 PIN","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Channel Type":"N-CHANNEL","Drain Current-Max (ID)":"80 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECT...
1372 Bytes - 10:58:09, 18 February 2025
Zilog.com/IXFH80N085
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"2500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"85 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0090 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"320 A","Channel Type":"N-CHANNEL"...
1518 Bytes - 10:58:09, 18 February 2025