Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"IXXH50N60C3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 4mA","Series":"HiPerFET\u2122, Polar3\u2122","Standard Package":"30","Supplier Device Package":"TO-247AD (IXFH)","Datasheets":"IXF(T,Q,H)60N50P3","Rds On (Max) @ Id, Vgs":"100 mOhm @ 30A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"1040W","Package / Case":"TO-247-3","Mounting ...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Power Dissipation":"1040(W)","Continuous Drain Current":"60(A)","Mounting":"Through Hole","Drain-Source On-Volt":"500(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-247AD","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"1000 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"60 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"150 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 ...