Product Datasheet Search Results:
1 Pages, 317 KB, Original- IXA60IF1200NA
- Ixys
- IGBT Modules XPT IGBT Copack
7 Pages, 195 KB, Original- IXA60IF1200NA
- Littelfuse
- Trans IGBT Module N-CH 1200V
6 Pages, 153 KB, Original- IXA60IF1200NA
- Ixys Semiconductor
- IGBT Single Transistor, 88 A, 1.8 V, 290 W, 1.2 kV, SOT-227B, 4
6 Pages, 153 KB, Original- IXA60IF1200NA
- Zilog
- 88 A, 1200 V, N-CHANNEL IGBT
Product Details Search Results:
Ixys.com/IXA60IF1200NA
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"88A","IGBT Type":"PT","Mounting Type":"Chassis, Stud Mount","Family":"IGBTs - Modules","Current - Collector Cutoff (Max)":"100\u00b5A","Series":"-","Standard Package":"10","Vce(on) (Max) @ Vge, Ic":"2.1V @ 15V, 50A","Voltage - Collector Emitter Breakdown (Max)":"1200V","Supplier Device Package":"SOT-227B","Datasheets":"IXA60IF1200NA","Power - Max":"290W","Package / Case":"SOT-227-4, miniBLOC","Input":"Standard","Input Capacitanc...
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Littelfuse.com/IXA60IF1200NA
{"Collector Current (DC) ":"88(A)","Operating Temperature (Min)":"-40C","Mounting":"Screw","Operating Temperature (Max)":"125C","Gate to Emitter Voltage (Max)":"\u00b120(V)","Channel Type":"N","Packaging":"Rail/Tube","Operating Temperature Classification":"Automotive","Rad Hardened":"No","Package Type":"SOT-227B","Configuration":"Single Dual Emitter","Pin Count":"4"}...
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Null/IXA60IF1200NA
{"Transistor Type:":"IGBT","Collector Emitter Voltage V(br)ceo:":"1.2 kV","Collector Emitter Voltage Vces:":"1.8 V","MSL:":"-","No. of Pins:":"4","DC Collector Current:":"88 A","Power Dissipation Pd:":"290 W","Transistor Case Style:":"SOT-227B","Operating Temperature Max:":"150 \u00b0C","Operating Temperature Min:":"-55 \u00b0C","SVHC:":"To Be Advised"}...
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Zilog.com/IXA60IF1200NA
{"Terminal Finish":"NICKEL","Terminal Form":"UNSPECIFIED","Turn-off Time-Nom (toff)":"350 ns","Collector Current-Max (IC)":"88 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"110 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"1200 V","Channel Type":"N-CHANNEL","Transistor Applicat...
1409 Bytes - 15:12:07, 20 January 2025
