Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"42(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"110(W)","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Package \/ Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"42A (Tc)","Gate Charge (Qg) @ Vgs":"48nC @ 5V","Product Photos":"TO-252-3","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"27 mOhm @ 25A, 10V","Datasheets":"IRLR\/U2905PbF","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packagin...

{"Category":"MOSFET","Maximum Drain Source Voltage":"55 V","Typical Rise Time":"84 ns","Typical Turn-Off Delay Time":"26 ns","Description":"Value","Maximum Continuous Drain Current":"42 A","Package":"3DPAK","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b116 V","Typical Turn-On Delay Time":"11 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"27@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"15 ns"}...