Product Datasheet Search Results:
- IRL530NL
- International Rectifier
- MOSFET N-CH 100V 17A TO-262 - IRL530NL
- IRL530NLPBF
- International Rectifier
- 17 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Product Details Search Results:
Irf.com/IRL530NL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Supplier Device Package":"TO-262","Datasheets":"IRL530NS/L","Rds On (Max) @ Id, Vgs":"100 mOhm @ 9A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"3.8W","Standard Package":"50","Input Capacitance (Ciss) @ Vds":"800pF @ 25V",...
1474 Bytes - 05:17:46, 23 January 2025
Irf.com/IRL530NLPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"3.8 W","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"17 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Curren...
1623 Bytes - 05:17:46, 23 January 2025
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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IRL530NL.pdf | 0.29 | 1 | Request |